@inproceedings{851005e90b4c4ed3868abe7e7116f99d,
title = "Defect engineering for ultrashallow junctions using surfaces",
abstract = "The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron.",
author = "Seebauer, {E. G.} and Kwok, {C. T.M.} and R. Vaidyanathan and Kondratenko, {Y. V.} and Yeong, {S. H.} and Srinivasan, {M. P.} and Benjamin Colombeau and Lap Chan",
year = "2008",
doi = "10.1149/1.2911485",
language = "English (US)",
isbn = "9781566776264",
series = "ECS Transactions",
number = "1",
pages = "55--62",
booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4",
edition = "1",
note = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 ; Conference date: 18-05-2008 Through 22-05-2008",
}