Defect engineering for ultrashallow junctions using surfaces

Edmund G Seebauer, C. T.M. Kwok, R. Vaidyanathan, Y. V. Kondratenko, S. H. Yeong, M. P. Srinivasan, Benjamin Colombeau, Lap Chan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron.

Original languageEnglish (US)
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages55-62
Number of pages8
Edition1
DOIs
StatePublished - Nov 13 2008
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: May 18 2008May 22 2008

Publication series

NameECS Transactions
Number1
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period5/18/085/22/08

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Seebauer, E. G., Kwok, C. T. M., Vaidyanathan, R., Kondratenko, Y. V., Yeong, S. H., Srinivasan, M. P., Colombeau, B., & Chan, L. (2008). Defect engineering for ultrashallow junctions using surfaces. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 55-62). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911485