Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

K. Nordlund, J. Peltola, J. Nord, J. Keinonen, R. S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed.

Original languageEnglish (US)
Pages (from-to)1710-1717
Number of pages8
JournalJournal of Applied Physics
Volume90
Issue number4
DOIs
StatePublished - Aug 15 2001

ASJC Scopus subject areas

  • General Physics and Astronomy

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