Abstract
Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed.
Original language | English (US) |
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Pages (from-to) | 1710-1717 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 90 |
Issue number | 4 |
DOIs | |
State | Published - Aug 15 2001 |
ASJC Scopus subject areas
- General Physics and Astronomy