Deep level characteristics in n-GaN with inductively coupled plasma damage

H. K. Cho, F. A. Khan, I. Adesida, Z. Q. Fang, D. C. Look

Research output: Contribution to journalArticlepeer-review


The effects of energetic ion-induced damage on deep traps in n-GaN have been investigated using deep level transient spectroscopy. The energetic ions were produced in an inductively coupled plasma reactive ion etching (ICP-RIE) system. The electrons captured at the trap levels E1 (0.25 eV) and E2 (0.62 eV), in a control sample, were found to depend logarithmically on the duration of the filling pulse, indicating a relationship to dislocations. The dramatic increase in the concentration of deep level E1 traps, as a function of etching-bias voltage, is thought to indicate the introduction of a V N-related complex. On the other hand, the concentration of deep level E2 traps shows an initial increase at an etching-bias of -50 V, followed by a decrease at higher etching-bias voltages. This trend was also observed in the room-temperature yellow luminescence spectra and x-ray photoelectron spectroscopy, which suggests that the deep level E2 is associated with point defects in the form of VGa-impurity complexes.

Original languageEnglish (US)
Article number155314
JournalJournal of Physics D: Applied Physics
Issue number15
StatePublished - Aug 7 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


Dive into the research topics of 'Deep level characteristics in n-GaN with inductively coupled plasma damage'. Together they form a unique fingerprint.

Cite this