DC-Contact RF MEMS switches using Thin-Film cantilevers

Hui Shen; Songbin Gong; N. Scott Barker

doi:10.1109/EMICC.2008.4772309

DC-Contact RF MEMS switches using Thin-Film cantilevers

Hui Shen, Songbin Gong, N. Scott Barker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper describes the development of DC-contact RF-MEMS SPST, SP3T, and SP4T switches implemented with a thin-film cantilever. Using aluminium as the sacrificial layer in the fabrication process, flat cantilevers are realized with a measured actuation voltage of 50̃70 V. The SPST switch is used as a building block to realize more complicated SP3T and SP4T switches for use in true-time delay phase shifters. The preliminary measurements of the SP3T and SP4T switches demonstrate isolation of 20 dB and insertion loss less than 2 dB up to 50 GHz.

Original language	English (US)
Title of host publication	2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Pages	382-385
Number of pages	4
DOIs	https://doi.org/10.1109/EMICC.2008.4772309
State	Published - Dec 1 2008
Externally published	Yes
Event	2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam, Netherlands Duration: Oct 27 2008 → Oct 31 2008

Publication series

Name	2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Other

Other	2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Country	Netherlands
City	Amsterdam
Period	10/27/08 → 10/31/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EMICC.2008.4772309

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Cite this

Shen, H, Gong, S & Barker, NS 2008, DC-Contact RF MEMS switches using Thin-Film cantilevers. in 2008 European Microwave Integrated Circuit Conference, EuMIC 2008., 4772309, 2008 European Microwave Integrated Circuit Conference, EuMIC 2008, pp. 382-385, 2008 European Microwave Integrated Circuit Conference, EuMIC 2008, Amsterdam, Netherlands, 10/27/08. https://doi.org/10.1109/EMICC.2008.4772309

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abstract = "This paper describes the development of DC-contact RF-MEMS SPST, SP3T, and SP4T switches implemented with a thin-film cantilever. Using aluminium as the sacrificial layer in the fabrication process, flat cantilevers are realized with a measured actuation voltage of 5{\~0}70 V. The SPST switch is used as a building block to realize more complicated SP3T and SP4T switches for use in true-time delay phase shifters. The preliminary measurements of the SP3T and SP4T switches demonstrate isolation of 20 dB and insertion loss less than 2 dB up to 50 GHz.",

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