DC-Contact RF MEMS switches using Thin-Film cantilevers

Hui Shen, Songbin Gong, N. Scott Barker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the development of DC-contact RF-MEMS SPST, SP3T, and SP4T switches implemented with a thin-film cantilever. Using aluminium as the sacrificial layer in the fabrication process, flat cantilevers are realized with a measured actuation voltage of 50̃70 V. The SPST switch is used as a building block to realize more complicated SP3T and SP4T switches for use in true-time delay phase shifters. The preliminary measurements of the SP3T and SP4T switches demonstrate isolation of 20 dB and insertion loss less than 2 dB up to 50 GHz.

Original languageEnglish (US)
Title of host publication2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Pages382-385
Number of pages4
DOIs
StatePublished - Dec 1 2008
Externally publishedYes
Event2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam, Netherlands
Duration: Oct 27 2008Oct 31 2008

Publication series

Name2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Other

Other2008 European Microwave Integrated Circuit Conference, EuMIC 2008
CountryNetherlands
CityAmsterdam
Period10/27/0810/31/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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