DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journalArticlepeer-review


The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.

Original languageEnglish (US)
Pages (from-to)449-451
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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