Lattice-matched InGaAs/InAlAs MODFET's with gate lengths down to 0.15 μm have been fabricated and characterized. A large discrepancy is found between the gm measured at de and micro-wave frequencies and is attributed to the finite time constant of electron emission from deep traps in the InAlAs. A maximum fTof 112 GHz is measured on a 0.15-μm gate-length device. Devices with more shallow recessed gates are found to have a 50-percent larger output conductance that causes the devices to exhibit an fT that is greater than fmax.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering