DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths

D. C. Dumka; G. Cueva; H. Hier; O. A. Aina; I. Adesida

doi:10.1109/55.892426

DC and RF characteristics of doped multichannel AlAs_0.56Sb_0.44/In_0.53Ga_0.47As field effect transistors with variable gate-lengths

D. C. Dumka, G. Cueva, H. Hier, O. A. Aina, I. Adesida

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Abstract

Depletion-mode doped-channel field effect transistors (DCFETs) using AlAs_0.56Sb_0.44/In_0.53Ga_0.47 As heterostructure with multiple channels grown by molecular beam epitaxy (MBE) on InP substrate are presented. Devices with gate-lengths ranging from 0.2 μm to 1.0 μm have been fabricated. Three doped In_0.53Ga_0.47As channels separated by undoped AlAs_0.56Sb_0.44 layers are used for the devices. The devices exhibit unity current gain cut-off frequencies typically between 18 GHz and 73 GHz and corresponding maximum oscillation frequencies typically between 60 GHz and 160 GHz. The multiple channel approach results in wide linearity of dc and RF performance of the device.

Original language	English (US)
Pages (from-to)	5-7
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	1
DOIs	https://doi.org/10.1109/55.892426
State	Published - Jan 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.892426

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@article{63920be4306644fd9b4b473b5e89dac5,

title = "DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths",

abstract = "Depletion-mode doped-channel field effect transistors (DCFETs) using AlAs0.56Sb0.44/In0.53Ga0.47 As heterostructure with multiple channels grown by molecular beam epitaxy (MBE) on InP substrate are presented. Devices with gate-lengths ranging from 0.2 μm to 1.0 μm have been fabricated. Three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers are used for the devices. The devices exhibit unity current gain cut-off frequencies typically between 18 GHz and 73 GHz and corresponding maximum oscillation frequencies typically between 60 GHz and 160 GHz. The multiple channel approach results in wide linearity of dc and RF performance of the device.",

author = "Dumka, {D. C.} and G. Cueva and H. Hier and Aina, {O. A.} and I. Adesida",

note = "Funding Information: Manuscript received August 8, 2000; revised August 31, 2000. This work was supported by the Ballistic Missile Defense Office under Contract F33615-98-C-5236 administered by the Air Force Research Laboratory/MLPO and by ONR Grant N00014-98-1-0376. The review of this letter was arranged by Editor D. Ueda.",

year = "2001",

month = jan,

doi = "10.1109/55.892426",

language = "English (US)",

volume = "22",

pages = "5--7",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths

AU - Dumka, D. C.

AU - Cueva, G.

AU - Hier, H.

AU - Aina, O. A.

AU - Adesida, I.

N1 - Funding Information: Manuscript received August 8, 2000; revised August 31, 2000. This work was supported by the Ballistic Missile Defense Office under Contract F33615-98-C-5236 administered by the Air Force Research Laboratory/MLPO and by ONR Grant N00014-98-1-0376. The review of this letter was arranged by Editor D. Ueda.

PY - 2001/1

Y1 - 2001/1

N2 - Depletion-mode doped-channel field effect transistors (DCFETs) using AlAs0.56Sb0.44/In0.53Ga0.47 As heterostructure with multiple channels grown by molecular beam epitaxy (MBE) on InP substrate are presented. Devices with gate-lengths ranging from 0.2 μm to 1.0 μm have been fabricated. Three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers are used for the devices. The devices exhibit unity current gain cut-off frequencies typically between 18 GHz and 73 GHz and corresponding maximum oscillation frequencies typically between 60 GHz and 160 GHz. The multiple channel approach results in wide linearity of dc and RF performance of the device.

AB - Depletion-mode doped-channel field effect transistors (DCFETs) using AlAs0.56Sb0.44/In0.53Ga0.47 As heterostructure with multiple channels grown by molecular beam epitaxy (MBE) on InP substrate are presented. Devices with gate-lengths ranging from 0.2 μm to 1.0 μm have been fabricated. Three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers are used for the devices. The devices exhibit unity current gain cut-off frequencies typically between 18 GHz and 73 GHz and corresponding maximum oscillation frequencies typically between 60 GHz and 160 GHz. The multiple channel approach results in wide linearity of dc and RF performance of the device.

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