DATA-DRIVEN DESIGN OF HIGH ELECTRON MOBILITY TRANSISTOR DEVICES USING PHYSICS-INFORMED GAUSSIAN PROCESS MODELING

Keyphrases

• Transistor Device 100%
• High Electron Mobility Transistor 100%
• Data-driven Design 100%
• Gaussian Process Model 100%
• Physics-informed 100%
• Design Parameters 40%
• Surrogate Model 40%
• Channel Temperature 40%
• High Temperature 20%
• Finite Element Simulation 20%
• Multiphysics 20%
• Process Optimization 20%
• Material Properties 20%
• Manufacturing Process 20%
• Sampling Methods 20%
• High Efficiency 20%
• Power System 20%
• Process-based 20%
• Design Optimization 20%
• Design Space 20%
• Attractive Alternatives 20%
• Adaptive Sampling 20%
• Voltage Frequency 20%
• Gaussian Process 20%
• HEMT Devices 20%
• Training Database 20%

Engineering

• Design Parameter 100%
• Gaussians 100%
• Surrogate Model 100%
• Manufacturing Process 50%
• Power Engineering 50%
• Finite Element Simulation 50%
• Simulation Result 50%
• Sampling Technique 50%
• Design Optimization 50%
• Design Space 50%