Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching

Lingyu Kong, Yi Song, Jeong Dong Kim, Lan Yu, Daniel Wasserman, Wai Kin Chim, Sing Yang Chiam, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Producing densely packed high aspect ratio In0.53Ga0.47As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In0.53Ga0.47As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of InxGa1-xAs is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In0.53Ga0.47As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In0.53Ga0.47As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In0.53Ga0.47As nanostructures that will potentially enable large-volume production of In0.53Ga0.47As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Original languageEnglish (US)
Pages (from-to)10193-10205
Number of pages13
JournalACS Nano
Volume11
Issue number10
DOIs
StatePublished - Oct 24 2017

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Etching
Metals
etching
damage
metals
Nanostructures
Porosity
Defects
porosity
Indium
Dry etching
Nanoelectronics
Interface states
defects
Photodetectors
optoelectronic devices
Optoelectronic devices
high aspect ratio
smoothing
metal oxide semiconductors

Keywords

  • InGaAs
  • MOSCAPs
  • MacEtch
  • Schottky barrier height
  • digital etching
  • metal-assisted chemical etching
  • porous shell

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kong, L., Song, Y., Kim, J. D., Yu, L., Wasserman, D., Chim, W. K., ... Li, X. (2017). Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching. ACS Nano, 11(10), 10193-10205. https://doi.org/10.1021/acsnano.7b04752

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching. / Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling.

In: ACS Nano, Vol. 11, No. 10, 24.10.2017, p. 10193-10205.

Research output: Contribution to journalArticle

Kong, L, Song, Y, Kim, JD, Yu, L, Wasserman, D, Chim, WK, Chiam, SY & Li, X 2017, 'Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching', ACS Nano, vol. 11, no. 10, pp. 10193-10205. https://doi.org/10.1021/acsnano.7b04752
Kong L, Song Y, Kim JD, Yu L, Wasserman D, Chim WK et al. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching. ACS Nano. 2017 Oct 24;11(10):10193-10205. https://doi.org/10.1021/acsnano.7b04752
Kong, Lingyu ; Song, Yi ; Kim, Jeong Dong ; Yu, Lan ; Wasserman, Daniel ; Chim, Wai Kin ; Chiam, Sing Yang ; Li, Xiuling. / Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching. In: ACS Nano. 2017 ; Vol. 11, No. 10. pp. 10193-10205.
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