@article{eecc8608c0a54d869efa784f6e3e85b5,
title = "Damage accumulation in Si during high-dose self-ion implantation",
abstract = "The damage accumulation in Si during high-dose self-ion implantation was investigated by x-ray scattering and TEM. It was found that small vacancy and interstitial clusters formed during implantation, whose concentrations saturated after a dose of ≊ 3×10 14 cm ∓2. It was found that the concentration of implanted Si atoms became comparable to the saturation concentration of Frenkel pairs at a dose of ≊1×10 15 cm ∓2. The annealing behaviour was also found to reflect the initial state of damage within the implanted silicon samples.",
author = "Y. Zhong and C. Bailat and Averback, {R. S.} and Ghose, {S. K.} and Robinson, {I. K.}",
note = "Funding Information: This research was supported by National Science Foundation, under Grant No. DMR-9986160, and in part by a MURI Grant No. F49620-01-1-0336. The X16A beamline at NSLS and the CMM are operated by the UIUC Materials Research Laboaratory, and are supported by the U.S. Department of Energy (DOE) under Grant No. DEFG02-91ER45439. The NSLS is operated by the DOE under Grant No. DEAC02-98CH10886. The authors are grateful to Dr. P. Ehrhart for critical comments concerning the interpretation of the x-ray scattering results. The authors are grateful to Dr. L. Funk and P. Baldo for performing the ion implantations. C. J. B. acknowledges the Swiss National Science Foundation for the financial support.",
year = "2004",
month = aug,
day = "1",
doi = "10.1063/1.1763242",
language = "English (US)",
volume = "96",
pages = "1328--1335",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",
}