The damage accumulation in Si during high-dose self-ion implantation was investigated by x-ray scattering and TEM. It was found that small vacancy and interstitial clusters formed during implantation, whose concentrations saturated after a dose of ≊ 3×10 14 cm ∓2. It was found that the concentration of implanted Si atoms became comparable to the saturation concentration of Frenkel pairs at a dose of ≊1×10 15 cm ∓2. The annealing behaviour was also found to reflect the initial state of damage within the implanted silicon samples.
ASJC Scopus subject areas
- Physics and Astronomy(all)