CVD hafnium diboride as a contact material for nanoelectromechanical switches

W. S. Lee, A. N. Cloud, J. Provine, N. Tayebi, R. Parsa, S. Mitra, H. S.P. Wong, J. R. Abelson, R. T. Howe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the first usage of hafnium diboride (HfB2) deposited via chemical vapor deposition as the contact material for nanoelectromechanical (NEM) switches. HfB2 is an excellent candidate for NEM switches due to its reasonable conductivity, high hardness, and high melting point. HfB2 was deposited conformally at 250°C onto the sidewalls of laterally actuated, polysilicon switches. HfB2 coated switches showed sharp switching characteristics when tested in a nitrogen ambient. The contact resistance was initially 29.6M0 but decreased to 1.43k0 by adding a dilute HF dip to remove the surface oxide.

Original languageEnglish (US)
Title of host publication2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
EditorsMehran Mehregany, David J. Monk
PublisherTransducer Research Foundation
Pages437-440
Number of pages4
ISBN (Electronic)9780964002494
StatePublished - Jan 1 2012
Event2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Other

Other2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
CountryUnited States
CityHilton Head
Period6/3/126/7/12

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Hardware and Architecture

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