@inproceedings{bdc673f6ba5b49cabb809f3e9e4347aa,
title = "CVD hafnium diboride as a contact material for nanoelectromechanical switches",
abstract = "This paper presents the first usage of hafnium diboride (HfB2) deposited via chemical vapor deposition as the contact material for nanoelectromechanical (NEM) switches. HfB2 is an excellent candidate for NEM switches due to its reasonable conductivity, high hardness, and high melting point. HfB2 was deposited conformally at 250°C onto the sidewalls of laterally actuated, polysilicon switches. HfB2 coated switches showed sharp switching characteristics when tested in a nitrogen ambient. The contact resistance was initially 29.6M0 but decreased to 1.43k0 by adding a dilute HF dip to remove the surface oxide.",
author = "Lee, {W. S.} and Cloud, {A. N.} and J. Provine and N. Tayebi and R. Parsa and S. Mitra and Wong, {H. S.P.} and Abelson, {J. R.} and Howe, {R. T.}",
year = "2012",
month = jan,
day = "1",
language = "English (US)",
series = "Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop",
publisher = "Transducer Research Foundation",
pages = "437--440",
editor = "Mehran Mehregany and Monk, {David J.}",
booktitle = "2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012",
note = "2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 ; Conference date: 03-06-2012 Through 07-06-2012",
}