Abstract
The connection between processing effects and curvature of a free-standing poly-Si thin film MEMS structure is analyzed theoretically and compared to experimental data. Estimates are made for the strain resulting from processing and post-processing effects including Phosphorus implantation and chemically neutral ion-beam machining. The inferred strain distribution is used to predict the curvature of the free-standing structure upon release from its host substrate. Curvature predictions agree closely with experimental measurements for particular choices of the processing strain magnitudes. The analysis procedure is proposed as a means to determine the through-thickness stress distribution in a free-standing structure. The ion-beam machining procedure is found to be a useful method for planarizing free-standing thin film structures with undesirable curvature due to process-induced stress.
Original language | English (US) |
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Pages (from-to) | EE5141-EE5146 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 657 |
State | Published - 2001 |
Externally published | Yes |
Event | Material Science of Microelectromechanical Systems (MEMS) Devices III - Boston, MA, United States Duration: Nov 27 2000 → Nov 28 2000 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering