@article{20a493434daf4d938596c692085107f0,
title = "Curvature-Dependent Electrochemo-Mechanics of Silicon during Electrochemical Cycling",
abstract = "Silicon is an emerging anode material due to its high lithium storage capacity. While some commercial batteries now include silicon particles, porous three-dimensional (3D) scaffolded silicon electrodes may enable higher silicon loading by accommodating the silicon volume expansion during lithiation without significant electrode swelling. However, the electrochemomechanical response of silicon films on metal scaffolds remains poorly understood due to the complex scaffold morphology. We explore the role of scaffold curvature in the cycling behavior of silicon films and show that different curvatures exhibit distinctive failure modes. Negative curvature leads to crack opening from tensile and compressive stresses. Positive curvature induces tensile stress-driven buckling. Zero curvature exhibits fragmentation. The electrode morphology and chemistry for these systems are evaluated via scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy (STEM-EDS). COMSOL Multiphysics simulations support that the electrochemo-mechanics of silicon are curvature-dependent. These findings point toward design strategies for 3D architected silicon anodes with improved cycling integrity.",
author = "Hyewon Jeong and Zhuoyuan Zheng and Parth Bansal and Fritz, \{Nathan J.\} and Peilin Lu and Arghya Patra and Beniamin Zahiri and Pingfeng Wang and Braun, \{Paul V.\}",
note = "The authors acknowledge support from a Kwanjeong Fellowship (HJ), the National Science Foundation (NSF) through the University of Illinois Urbana-Champaign Materials Research Science and Engineering Center (DMR-2309037), and an NSF Future Manufacturing Research Grant under award CMMI-2037898. This work was performed in-part in the University of Illinois Materials Research Laboratory (MRL) Central Facilities. We appreciate Prof. J. Abelson (Univ. of Illinois Urbana-Champaign) for discussions about CVD-grown thin film silicon and Prof. J. Hutchinson (Harvard University) for discussions about thin film delamination. We also thank Dr. Honghui Zhou and Dr. Changqiang Chen of the MRL Central Facilities for discussions regarding FIB and STEM. The authors acknowledge support from a Kwanjeong Fellowship (HJ), the National Science Foundation (NSF) through the University of Illinois Urbana–Champaign Materials Research Science and Engineering Center (DMR-2309037), and an NSF Future Manufacturing Research Grant under award CMMI-2037898. This work was performed in-part in the University of Illinois Materials Research Laboratory (MRL) Central Facilities. We appreciate Prof. J. Abelson (Univ. of Illinois Urbana–Champaign) for discussions about CVD-grown thin film silicon and Prof. J. Hutchinson (Harvard University) for discussions about thin film delamination. We also thank Dr. Honghui Zhou and Dr. Changqiang Chen of the MRL Central Facilities for discussions regarding FIB and STEM.",
year = "2025",
month = jul,
day = "11",
doi = "10.1021/acsenergylett.5c01043",
language = "English (US)",
volume = "10",
pages = "3388--3394",
journal = "ACS Energy Letters",
issn = "2380-8195",
publisher = "American Chemical Society",
number = "7",
}