Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

N. Pimparkar; Q. Cao; S. Kumar; J. Y. Murthy; J. Rogers

doi:10.1109/LED.2006.889219

Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

N. Pimparkar
, Q. Cao
, S. Kumar
, J. Y. Murthy
, J. Rogers

Research output: Contribution to journal › Article › peer-review

Abstract

By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula I_D = A/L_Sξ(L_S/L_C, ρ_SL_S²) × f (V_G, V_D) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length L_S, channel length L_C, and stick density ρ_S and f is a function of drain V_D and gate V_G biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

Original language	English (US)
Pages (from-to)	157-160
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/LED.2006.889219
State	Published - Feb 2007

Keywords

Carbon nanotube (NT)
Inhomogeneous percolation theory
Network transistor
Thin-film transistor (TFT)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/LED.2006.889219

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title = "Current-voltage characteristics of long-channel nanobundle thin-film transistors: A {"}Bottom-Up{"} perspective",

abstract = "By generalizing the classical linear response theory of {"}stick{"}percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a {"}single{"} NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.",

keywords = "Carbon nanotube (NT), Inhomogeneous percolation theory, Network transistor, Thin-film transistor (TFT)",

author = "N. Pimparkar and Q. Cao and S. Kumar and Murthy, \{J. Y.\} and J. Rogers",

note = "Manuscript received August 20, 2006. This work was supported by the Network of Computational Nanotechnology and the Lilly Foundation. The review of this letter was arranged by Editor E. Samgiorgi.",

year = "2007",

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T2 - A "Bottom-Up" perspective

AU - Pimparkar, N.

AU - Cao, Q.

AU - Kumar, S.

AU - Murthy, J. Y.

AU - Rogers, J.

N1 - Manuscript received August 20, 2006. This work was supported by the Network of Computational Nanotechnology and the Lilly Foundation. The review of this letter was arranged by Editor E. Samgiorgi.

PY - 2007/2

Y1 - 2007/2

N2 - By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

AB - By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

KW - Carbon nanotube (NT)

KW - Inhomogeneous percolation theory

KW - Network transistor

KW - Thin-film transistor (TFT)

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U2 - 10.1109/LED.2006.889219

DO - 10.1109/LED.2006.889219

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SN - 0741-3106

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SP - 157

EP - 160

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

Abstract

Keywords

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