TY - JOUR
T1 - Current-voltage characteristics of long-channel nanobundle thin-film transistors
T2 - A "Bottom-Up" perspective
AU - Pimparkar, N.
AU - Cao, Q.
AU - Kumar, S.
AU - Murthy, J. Y.
AU - Rogers, J.
N1 - Funding Information:
Manuscript received August 20, 2006. This work was supported by the Network of Computational Nanotechnology and the Lilly Foundation. The review of this letter was arranged by Editor E. Samgiorgi.
PY - 2007/2
Y1 - 2007/2
N2 - By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.
AB - By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.
KW - Carbon nanotube (NT)
KW - Inhomogeneous percolation theory
KW - Network transistor
KW - Thin-film transistor (TFT)
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U2 - 10.1109/LED.2006.889219
DO - 10.1109/LED.2006.889219
M3 - Article
AN - SCOPUS:33847375038
SN - 0741-3106
VL - 28
SP - 157
EP - 160
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
ER -