Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

N. Pimparkar, Q. Cao, S. Kumar, J. Y. Murthy, J. Rogers

Research output: Contribution to journalArticle

Abstract

By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

Original languageEnglish (US)
Pages (from-to)157-160
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number2
DOIs
StatePublished - Feb 1 2007

Fingerprint

Thin film transistors
Current voltage characteristics
Drain current
Transistors

Keywords

  • Carbon nanotube (NT)
  • Inhomogeneous percolation theory
  • Network transistor
  • Thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Current-voltage characteristics of long-channel nanobundle thin-film transistors : A "Bottom-Up" perspective. / Pimparkar, N.; Cao, Q.; Kumar, S.; Murthy, J. Y.; Rogers, J.

In: IEEE Electron Device Letters, Vol. 28, No. 2, 01.02.2007, p. 157-160.

Research output: Contribution to journalArticle

Pimparkar, N. ; Cao, Q. ; Kumar, S. ; Murthy, J. Y. ; Rogers, J. / Current-voltage characteristics of long-channel nanobundle thin-film transistors : A "Bottom-Up" perspective. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 2. pp. 157-160.
@article{6657e51db7984f83803d6781ec42a9be,
title = "Current-voltage characteristics of long-channel nanobundle thin-film transistors: A {"}Bottom-Up{"} perspective",
abstract = "By generalizing the classical linear response theory of {"}stick{"}percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a {"}single{"} NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.",
keywords = "Carbon nanotube (NT), Inhomogeneous percolation theory, Network transistor, Thin-film transistor (TFT)",
author = "N. Pimparkar and Q. Cao and S. Kumar and Murthy, {J. Y.} and J. Rogers",
year = "2007",
month = "2",
day = "1",
doi = "10.1109/LED.2006.889219",
language = "English (US)",
volume = "28",
pages = "157--160",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Current-voltage characteristics of long-channel nanobundle thin-film transistors

T2 - A "Bottom-Up" perspective

AU - Pimparkar, N.

AU - Cao, Q.

AU - Kumar, S.

AU - Murthy, J. Y.

AU - Rogers, J.

PY - 2007/2/1

Y1 - 2007/2/1

N2 - By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

AB - By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

KW - Carbon nanotube (NT)

KW - Inhomogeneous percolation theory

KW - Network transistor

KW - Thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=33847375038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847375038&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.889219

DO - 10.1109/LED.2006.889219

M3 - Article

AN - SCOPUS:33847375038

VL - 28

SP - 157

EP - 160

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

ER -