Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

N. Pimparkar, Q. Cao, S. Kumar, J. Y. Murthy, J. Rogers

Research output: Contribution to journalArticlepeer-review


By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

Original languageEnglish (US)
Pages (from-to)157-160
Number of pages4
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2007


  • Carbon nanotube (NT)
  • Inhomogeneous percolation theory
  • Network transistor
  • Thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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