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Current transport in metal/hafnium oxide/silicon structure
W. J. Zhu
, Tso Ping Ma
, Takashi Tamagawa
, J. Kim
, Y. Di
Research output
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Contribution to journal
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Article
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peer-review
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Keyphrases
HfO2
100%
Current Transport
100%
Silicon Structure
100%
Hafnium Oxide
100%
Barrier Height
50%
Free Electrons
16%
Conduction Band
16%
Si Structures
16%
Energy Band Diagram
16%
Electron Mass
16%
Fowler-Nordheim Tunneling
16%
Conduction Band Offset
16%
Trap Level
16%
Current Transport Mechanism
16%
Poole-Frenkel
16%
Offset Height
16%
Electron Effective Mass
16%
Temperature Dependence
16%
Gate Leakage Current
16%
Material Science
Silicon
100%
Oxide Compound
100%
Hafnium
100%
Band Offset
100%