Current transport in metal/hafnium oxide/silicon structure

W. J. Zhu, Tso Ping Ma, Takashi Tamagawa, J. Kim, Y. Di

Research output: Contribution to journalArticlepeer-review

Abstract

Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO 2/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO 2/Si conduction band offset (or barrier height): 1.13 ± 0.13 eV; ii) Pt/HfO 2 barrier height: ∼ 2.48 eV; iii) Al/HfO 2 barrier height: ∼ 1.28 eV; iv) electron effective mass in HfO 2: 0.1 m o, where m o is the free electron mass and v) a trap level at 1.5 ± 0.1 eV below the HfO 2 conduction band which contributes to Frenkel-Poole conduction.

Original languageEnglish (US)
Pages (from-to)97-99
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number2
DOIs
StatePublished - Feb 1 2002
Externally publishedYes

Keywords

  • Current transport
  • Fowler-Nordheim tunneling
  • Frenkel-Poole conduction
  • Hafnium oxide
  • Schottky emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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