Current transport in metal/hafnium oxide/silicon structure

W. J. Zhu; Tso Ping Ma; Takashi Tamagawa; J. Kim; Y. Di

doi:10.1109/55.981318

Current transport in metal/hafnium oxide/silicon structure

W. J. Zhu, Tso Ping Ma, Takashi Tamagawa, J. Kim, Y. Di

Research output: Contribution to journal › Article › peer-review

Abstract

Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO ₂/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO ₂/Si conduction band offset (or barrier height): 1.13 ± 0.13 eV; ii) Pt/HfO ₂ barrier height: ∼ 2.48 eV; iii) Al/HfO ₂ barrier height: ∼ 1.28 eV; iv) electron effective mass in HfO ₂: 0.1 m _o, where m _o is the free electron mass and v) a trap level at 1.5 ± 0.1 eV below the HfO ₂ conduction band which contributes to Frenkel-Poole conduction.

Original language	English (US)
Pages (from-to)	97-99
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	2
DOIs	https://doi.org/10.1109/55.981318
State	Published - Feb 2002
Externally published	Yes

Keywords

Current transport
Fowler-Nordheim tunneling
Frenkel-Poole conduction
Hafnium oxide
Schottky emission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/55.981318

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@article{d64dd9a85de44215af5157eef4efa081,

title = "Current transport in metal/hafnium oxide/silicon structure",

abstract = "Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO 2/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO 2/Si conduction band offset (or barrier height): 1.13 ± 0.13 eV; ii) Pt/HfO 2 barrier height: ∼ 2.48 eV; iii) Al/HfO 2 barrier height: ∼ 1.28 eV; iv) electron effective mass in HfO 2: 0.1 m o, where m o is the free electron mass and v) a trap level at 1.5 ± 0.1 eV below the HfO 2 conduction band which contributes to Frenkel-Poole conduction.",

keywords = "Current transport, Fowler-Nordheim tunneling, Frenkel-Poole conduction, Hafnium oxide, Schottky emission",

author = "Zhu, {W. J.} and Ma, {Tso Ping} and Takashi Tamagawa and J. Kim and Y. Di",

note = "Funding Information: Manuscript received October 5, 2001; revised November 20, 2001. The work performed at Yale University was supported by the Semiconductor Research Corporation and SEMATECH through the FEP Center at North Carolina State University, as well as by National Science Foundation and Office of Naval Research grants. The review of this letter was arranged by Editor K. De Meyer. W. J. Zhu and T. P. Ma are with Yale University, New Haven, CT 06520 USA (e-mail: [email protected]). T. Tamagawa and Y. Di are with the Jet Process Corporation, New Haven, CT 06520 USA. J. Kim is with the IBM Corporation, Yorktown Heights, NY 10598 USA. Publisher Item Identifier S 0741-3106(02)01492-1.",

year = "2002",

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doi = "10.1109/55.981318",

language = "English (US)",

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pages = "97--99",

journal = "IEEE Electron Device Letters",

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AU - Zhu, W. J.

AU - Ma, Tso Ping

AU - Tamagawa, Takashi

AU - Kim, J.

AU - Di, Y.

N1 - Funding Information: Manuscript received October 5, 2001; revised November 20, 2001. The work performed at Yale University was supported by the Semiconductor Research Corporation and SEMATECH through the FEP Center at North Carolina State University, as well as by National Science Foundation and Office of Naval Research grants. The review of this letter was arranged by Editor K. De Meyer. W. J. Zhu and T. P. Ma are with Yale University, New Haven, CT 06520 USA (e-mail: [email protected]). T. Tamagawa and Y. Di are with the Jet Process Corporation, New Haven, CT 06520 USA. J. Kim is with the IBM Corporation, Yorktown Heights, NY 10598 USA. Publisher Item Identifier S 0741-3106(02)01492-1.

PY - 2002/2

Y1 - 2002/2

N2 - Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO 2/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO 2/Si conduction band offset (or barrier height): 1.13 ± 0.13 eV; ii) Pt/HfO 2 barrier height: ∼ 2.48 eV; iii) Al/HfO 2 barrier height: ∼ 1.28 eV; iv) electron effective mass in HfO 2: 0.1 m o, where m o is the free electron mass and v) a trap level at 1.5 ± 0.1 eV below the HfO 2 conduction band which contributes to Frenkel-Poole conduction.

AB - Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for metal/HfO 2/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: i) HfO 2/Si conduction band offset (or barrier height): 1.13 ± 0.13 eV; ii) Pt/HfO 2 barrier height: ∼ 2.48 eV; iii) Al/HfO 2 barrier height: ∼ 1.28 eV; iv) electron effective mass in HfO 2: 0.1 m o, where m o is the free electron mass and v) a trap level at 1.5 ± 0.1 eV below the HfO 2 conduction band which contributes to Frenkel-Poole conduction.

KW - Current transport

KW - Fowler-Nordheim tunneling

KW - Frenkel-Poole conduction

KW - Hafnium oxide

KW - Schottky emission

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Current transport in metal/hafnium oxide/silicon structure

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