Current status of GaN heterojunction bipolar transistors

M. Feng, R. K. Price, R. Chan, T. Chung, R. D. Dupuis, D. M. Keogh, J. C. Li, A. M. Conway, D. Qiao, S. Raychaudhuri, P. M. Asbeck

Research output: Contribution to journalConference articlepeer-review


The paper reviews the current state-of-the-art GaN HBT results, and discusses advantages of GaN HBTs over GaN HFETs and other material systems for the high power amplifier applications. Technical difficulties associated with GaN HBTs such as MOCVD material growth, ICP dry etching, and ohmic contact issues are discussed. Methods for the elimination of technical issues and the authors recommended approaches for practical realization of the GaN HBT-based rf high power amplifiers will be described.

Original languageEnglish (US)
Article number1.1
Pages (from-to)26-31
Number of pages6
JournalProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
StatePublished - 2004
EventProceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada
Duration: Sep 13 2004Sep 14 2004

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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