Abstract
The paper reviews the current state-of-the-art GaN HBT results, and discusses advantages of GaN HBTs over GaN HFETs and other material systems for the high power amplifier applications. Technical difficulties associated with GaN HBTs such as MOCVD material growth, ICP dry etching, and ohmic contact issues are discussed. Methods for the elimination of technical issues and the authors recommended approaches for practical realization of the GaN HBT-based rf high power amplifiers will be described.
| Original language | English (US) |
|---|---|
| Article number | 1.1 |
| Pages (from-to) | 26-31 |
| Number of pages | 6 |
| Journal | Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
| State | Published - 2004 |
| Event | Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada Duration: Sep 13 2004 → Sep 14 2004 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering