Current-mode image sensor with 1.5 transistors per pixel and improved dynamic range

Zheng Yang, Viktor Gruev, Jan Van Der Spiegel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes a current-mode active pixel sensor (APS) for low supply voltage, low noise and high resolution/ high speed imaging applications. The imager is designed in a standard 0.25μm 2.5V CMOS process. A transistor count of 1.5 per pixel is achieved through transistor sharing and floating diffusion (FD) based addressing. Highly linear current readout in velocity saturation, as well as triple sampling (TS), are used to reduce fixed pattern noise (FPN). Dynamic range (DR) is improved through FD presetting and boosting techniques, which allow the full-well capacity of photodiodes to be utilized without degrading readout linearity. Post-extraction simulation results on FPN and DR are presented, and compared favorably to a conventional 3-transistor pixel design.

Original languageEnglish (US)
Title of host publication2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Pages1850-1853
Number of pages4
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
Duration: May 18 2008May 21 2008

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Country/TerritoryUnited States
CitySeattle, WA
Period5/18/085/21/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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