Abstract
We present a complementary metal-oxide-semiconductor (CMOS) imaging sensor containing two novelties in the field of current mode sensing. First, the in-pixel read-out transistor operates in velocity saturation mode and allows for high linearity between integrated photo charges and output current of the pixel. Second, the column parallel read-out circuitry includes a novel current conveyor with a feedback mechanism, which improves linearity of the output current and leads to improvements in fixed pattern noise. Correlated double sampling, a noise reduction technique, is performed on-chip via current mode circuits to improve spatial noise characteristics of the imager. A prototype of the proposed imaging sensor was fabricated in 0.18 μ m triple well CMOS process. The sensor operation and measurements are presented.
Original language | English (US) |
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Article number | 6644291 |
Pages (from-to) | 710-721 |
Number of pages | 12 |
Journal | IEEE Sensors Journal |
Volume | 14 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2014 |
Externally published | Yes |
Keywords
- CMOS image sensors
- current mode circuits
- feedback mechanism
- linear response
- velocity saturation
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering