Abstract
Structural changes from high-density electric currents were examined in a eutectic In-Sn/Cu interconnect. Under electrical loading, Sn and In migrated in opposite directions, creating a partition of the Sn- and In-rich phases between the anode and the cathode. At the anode, a net gain of Sn atoms resulted in the formation of massive, columnar hillocks on the surface, but a net loss of In led to dissolution and disappearance of the In-rich intermetallic layer. At the cathode, the exodus of Sn left valleys adjacent to the In-rich regions on the surface, while the amount of the In-rich phase grew, due to the net influx of In at the expense of the In-rich intermetallic layer.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1372-1377 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 36 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 2007 |
| Externally published | Yes |
Keywords
- Current stressing
- Electromigration
- Hillocks
- In-Sn solder
- Interface
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry