Current biased dual DBR grating semiconductor laser

James J Coleman (Inventor), S. David Roh (Inventor)

Research output: Patent

Abstract

A laser heterostructure having an active layer, a lateral waveguide terminating in an output aperture, and a gain section with a current drive electrode. A rear surface distributed Bragg grating with a tuning current electrode is formed on a surface of said laser heterostructure. The laser also includes a front surface distributed Bragg grating with a tuning current electrode on a surface of the laser heterostructure. The front surface distributed Bragg grating is closer to the output aperture than the rear surface distributed Bragg grating, There is a space between the rear surface distributed Bragg grating and the front surface distributed Bragg grating. A current drive electrode is formed on the space. Operation is best when the front surface distributed Bragg grating has adequate reflectivity at the Bragg wavelength with minimal scattering loss at other wavelengths, particularly at the wavelength of the rear surface Bragg grating.
Original languageEnglish (US)
U.S. patent number6728290
Filing date9/13/00
StatePublished - Apr 27 2004

Fingerprint

Dive into the research topics of 'Current biased dual DBR grating semiconductor laser'. Together they form a unique fingerprint.

Cite this