Cubic phase light emitters hetero-integrated on silicon

C. Bayram, R. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via co-integration on cheap and scalable CMOS-compatible Si(100) substrate.

Original languageEnglish (US)
Title of host publication30th Annual Conference of the IEEE Photonics Society, IPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35-36
Number of pages2
ISBN (Electronic)9781509065783
DOIs
StatePublished - Nov 20 2017
Event30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

Name30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume2017-January

Other

Other30th Annual Conference of the IEEE Photonics Society, IPC 2017
CountryUnited States
CityLake Buena Vista
Period10/1/1710/5/17

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Instrumentation

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