Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy

Can Bayram, John A. Ott, Kuen Ting Shiu, Cheng Wei Cheng, Yu Zhu, Jeehwan Kim, Manijeh Razeghi, Devendra K. Sadana

Research output: Contribution to journalArticle

Abstract

A method of forming cubic phase (zinc blende) GaN (referred as c-GaN) on a CMOS-compatible on-axis Si (100) substrate is reported. Conventional GaN materials are hexagonal phase (wurtzite) (referred as h-GaN) and possess very high polarization fields (∼MV/cm) along the common growth direction of <0001>. Such large polarization fields lead to undesired shifts (e.g., wavelength and current) in the performance of photonic and vertical transport electronic devices. The cubic phase of GaN materials is polarization-free along the common growth direction of <001>, however, this phase is thermodynamically unstable, requiring low-temperature deposition conditions and unconventional substrates (e.g., GaAs). Here, novel nano-groove patterning and maskless selective area epitaxy processes are employed to integrate thermodynamically stable, stress-free, and low-defectivity c-GaN on CMOS-compatible on-axis Si. These results suggest that epitaxial growth conditions and nano-groove pattern parameters are critical to obtain such high quality c-GaN. InGaN/GaN multi-quantum-well structures grown on c-GaN/Si (100) show strong room temperature luminescence in the visible spectrum, promising visible emitter applications for this technology. Thermodynamically stable, stress-free, and low-defectivity GaN is integrated on CMOS Si (100) substrates. A new mask-free local-area epitaxy is introduced, resolving the issue of lattice and thermal mismatch between GaN and Si. A novel U-shaped nano-groove pattern is proposed, enabling polarization-free cubic phase GaN. InGaN/GaN multi-quantum-well structures on such polarization-free GaN/Si templates offer an ideal roadmap for (integrated) photonic devices.

Original languageEnglish (US)
Pages (from-to)4492-4496
Number of pages5
JournalAdvanced Functional Materials
Volume24
Issue number28
DOIs
StatePublished - Jul 23 2014
Externally publishedYes

Keywords

  • cubic phase
  • gallium nitride
  • maskless selective area epitaxy
  • nano-grooves
  • silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Bayram, C., Ott, J. A., Shiu, K. T., Cheng, C. W., Zhu, Y., Kim, J., Razeghi, M., & Sadana, D. K. (2014). Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy. Advanced Functional Materials, 24(28), 4492-4496. https://doi.org/10.1002/adfm.201304062