Cubic phase GaN integrated on CMOS-compatible silicon (100)

R. Liu, C. Bayram

Research output: Contribution to conferencePaper

Abstract

We report a method of synthesizing pure cubic phase GaN integrated on Si(100) platform using the novel aspect ratio nano-patterning. We demonstrated through modelling and experiment data that complete cubic phase GaN epilayer coverage can be achieved when critical silicon patterning parameters are met. The purity and quality of the resulting cubic phase GaN are verified using temperature dependent cathodoluminescence, atomic force microscopy and electron backscatter diffraction. Acceptor energies, Varshni coefficient, surface roughness, spectral and spatial quality are reported.

Original languageEnglish (US)
StatePublished - Jan 1 2017
Event2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States
Duration: May 22 2017May 25 2017

Other

Other2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
CountryUnited States
CityIndian Wells
Period5/22/175/25/17

Keywords

  • Cathodoluminescence
  • Cubic
  • Electron backscatter diffraction
  • Gallium nitride (GaN)
  • Si

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Liu, R., & Bayram, C. (2017). Cubic phase GaN integrated on CMOS-compatible silicon (100). Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.