Cu-Mo contacts to CuInSe 2 for improved adhesion in photovoltaic devices

L. Chung Yang, Angus Rockett

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a new back contact material containing a mixture of Cu and Mo, containing nearly 30% Cu, which substantially enhances the adhesion and device performance uniformity in copper indium selenide (CIS) based photovoltaic devices. It is seen that the metastable solution delivers a rate limited supply of Cu to the back of the CIS layer, resulting in a Cu rich layer over a small distance from the contact, even though the Cu composition remains relatively constant throughout the rest of the layer. Under normal production conditions about 10% of the Cu is provided by the CIS layer, giving a strong chemical and mechanical bond to the substrate without adversely affecting back-contact properties.

Original languageEnglish (US)
Pages (from-to)1185-1189
Number of pages5
JournalJournal of Applied Physics
Volume75
Issue number2
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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