This paper presents a new back contact material containing a mixture of Cu and Mo, containing nearly 30% Cu, which substantially enhances the adhesion and device performance uniformity in copper indium selenide (CIS) based photovoltaic devices. It is seen that the metastable solution delivers a rate limited supply of Cu to the back of the CIS layer, resulting in a Cu rich layer over a small distance from the contact, even though the Cu composition remains relatively constant throughout the rest of the layer. Under normal production conditions about 10% of the Cu is provided by the CIS layer, giving a strong chemical and mechanical bond to the substrate without adversely affecting back-contact properties.
ASJC Scopus subject areas
- Physics and Astronomy(all)