Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Yu Yang; Sreenivas Jayaraman; Do Young Kim; Gregory S. Girolami; John R. Abelson

doi:10.1016/j.jcrysgro.2006.05.035

Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Yu Yang, Sreenivas Jayaraman, Do Young Kim, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journal › Article

Abstract

The texture evolution of hafnium diboride (HfB₂) thin films grown by chemical vapor deposition from the single source precursor Hf(BH₄)₄ was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB₂ can be epitaxially grown on Si (1 1 1) substrates.

Original language	English (US)
Pages (from-to)	389-395
Number of pages	7
Journal	Journal of Crystal Growth
Volume	294
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.05.035
State	Published - Sep 4 2006

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Keywords

A3. Chemical vapor deposition processes
A3. Crystalline texture
B1. Metal diborides

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Yang, Y., Jayaraman, S., Kim, D. Y., Girolami, G. S., & Abelson, J. R. (2006). Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition. Journal of Crystal Growth, 294(2), 389-395. https://doi.org/10.1016/j.jcrysgro.2006.05.035

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title = "Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition",

abstract = "The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.",

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AU - Yang, Yu

AU - Jayaraman, Sreenivas

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AU - Girolami, Gregory S.

AU - Abelson, John R.

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N2 - The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.

AB - The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.

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KW - A3. Crystalline texture

KW - B1. Metal diborides

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10.1016/j.jcrysgro.2006.05.035