Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Yu Yang, Sreenivas Jayaraman, Do Young Kim, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.

Original languageEnglish (US)
Pages (from-to)389-395
Number of pages7
JournalJournal of Crystal Growth
Volume294
Issue number2
DOIs
StatePublished - Sep 4 2006

Keywords

  • A3. Chemical vapor deposition processes
  • A3. Crystalline texture
  • B1. Metal diborides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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