Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Yu Yang; Sreenivas Jayaraman; Do Young Kim; Gregory S. Girolami; John R. Abelson

doi:10.1016/j.jcrysgro.2006.05.035

Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Yu Yang, Sreenivas Jayaraman, Do Young Kim, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journal › Article › peer-review

Abstract

The texture evolution of hafnium diboride (HfB₂) thin films grown by chemical vapor deposition from the single source precursor Hf(BH₄)₄ was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB₂ can be epitaxially grown on Si (1 1 1) substrates.

Original language	English (US)
Pages (from-to)	389-395
Number of pages	7
Journal	Journal of Crystal Growth
Volume	294
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.05.035
State	Published - Sep 4 2006

Keywords

A3. Chemical vapor deposition processes
A3. Crystalline texture
B1. Metal diborides

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition",

abstract = "The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.",

keywords = "A3. Chemical vapor deposition processes, A3. Crystalline texture, B1. Metal diborides",

author = "Yu Yang and Sreenivas Jayaraman and Kim, {Do Young} and Girolami, {Gregory S.} and Abelson, {John R.}",

note = "Funding Information: The authors are grateful to the National Science Foundation for support of this research under Grant nos. CH00-76061, DMR03-54060, and DMR04-20768. Compositional and structural analyses of the films were carried out in the Center for Microanalysis of Materials, University of Illinois, which is supported by the US Department of Energy under Grant no. DOE DEFG02-91ER45439. ",

year = "2006",

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doi = "10.1016/j.jcrysgro.2006.05.035",

language = "English (US)",

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AU - Yang, Yu

AU - Jayaraman, Sreenivas

AU - Kim, Do Young

AU - Girolami, Gregory S.

AU - Abelson, John R.

N1 - Funding Information: The authors are grateful to the National Science Foundation for support of this research under Grant nos. CH00-76061, DMR03-54060, and DMR04-20768. Compositional and structural analyses of the films were carried out in the Center for Microanalysis of Materials, University of Illinois, which is supported by the US Department of Energy under Grant no. DOE DEFG02-91ER45439.

PY - 2006/9/4

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N2 - The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.

AB - The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.

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KW - B1. Metal diborides

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