Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

Yu Yang, Sreenivas Jayaraman, Do Young Kim, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journalArticle

Abstract

The texture evolution of hafnium diboride (HfB2) thin films grown by chemical vapor deposition from the single source precursor Hf(BH4)4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ≤700 °C, but a (1 0under(1, {combining low line}) 0) orientation at 800 °C and above. Single-crystal substrates greatly influence the preferred orientation and in-plane texture of the films: (1 0under(1, {combining low line}) 0) orientation is favored on Si (0 0 1), whereas there is a strong tendency to grow in a (0 0 0 1) orientation on Si (1 1 1). At a growth temperature of 950 °C, HfB2 can be epitaxially grown on Si (1 1 1) substrates.

Original languageEnglish (US)
Pages (from-to)389-395
Number of pages7
JournalJournal of Crystal Growth
Volume294
Issue number2
DOIs
StatePublished - Sep 4 2006

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Keywords

  • A3. Chemical vapor deposition processes
  • A3. Crystalline texture
  • B1. Metal diborides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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