Crystal structure solution and high-temperature thermal expansion in NaZr2(PO4)3-type materials

Benjamin S. Hulbert, Julia E. Brodecki, Waltraud M. Kriven

Research output: Contribution to journalArticlepeer-review

Abstract

The NaZr2P3O12 family of materials have shown low and tailorable thermal expansion properties. In this study, SrZr4P6O24 (SrO‧4ZrO2‧3P2O5), CaZr4P6O24 (CaO‧4ZrO2‧3P2O5), MgZr4P6O24 (MgO‧4ZrO2‧3P2O5), NaTi2P3O12 [12(Na2O‧4TiO2‧3P2O5)], NaZr2P3O12 [12(Na2O‧4ZrO2‧3P2O5)], and related solid solutions were synthesized using the organic–inorganic steric entrapment method. The samples were characterized by in-situ high-temperature X-ray diffraction from 25 to 1500C at the Advanced Photon Source and National Synchrotron Light Source II. The average linear thermal expansion of SrZr4P6O24 and CaZr4P6O24 was between -1 x 10-6 per C and 6 x 10-6 per C from 25 to 1500C. The crystal structures of the high-temperature polymorphs of CaZr4P6O24 and SrZr4P6O24 with R3c symmetry were solved by Fourier difference mapping and Rietveld refinement. This polymorph is present above ~1250C. This work measured thermal expansion coefficients to 1500C for all samples and investigated the differences in thermal expansion mechanisms between polymorphs and between compositions.

Original languageEnglish (US)
Pages (from-to)146-159
Number of pages14
JournalActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials
Volume80
Issue numberPt 2
DOIs
StatePublished - Apr 1 2024

Keywords

  • CaZr(PO)
  • Fourier difference map
  • NZP-type materials
  • phase transformation
  • powder diffraction
  • SrZr(PO)
  • structure solution
  • thermal expansion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Metals and Alloys
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Crystal structure solution and high-temperature thermal expansion in NaZr2(PO4)3-type materials'. Together they form a unique fingerprint.

Cite this