Abstract
Results from the growth of bulk Ga1-xInxSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.
Original language | English (US) |
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Pages (from-to) | 1090-1094 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 312 |
Issue number | 8 |
DOIs | |
State | Published - Apr 1 2010 |
Externally published | Yes |
Keywords
- A1. Segregation
- A2. Growth from melt
- B1. Antimonides
- B2. Semiconducting ternary compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry