Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Brent C. Houchens, Piotr Becla, Stephanie E. Tritchler, Andres J. Goza, David F. Bliss

Research output: Contribution to journalArticlepeer-review

Abstract

Results from the growth of bulk Ga1-xInxSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.

Original languageEnglish (US)
Pages (from-to)1090-1094
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number8
DOIs
StatePublished - Apr 1 2010
Externally publishedYes

Keywords

  • A1. Segregation
  • A2. Growth from melt
  • B1. Antimonides
  • B2. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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