Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Brent C. Houchens; Piotr Becla; Stephanie E. Tritchler; Andres J. Goza; David F. Bliss

doi:10.1016/j.jcrysgro.2009.12.051

Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Brent C. Houchens, Piotr Becla, Stephanie E. Tritchler, Andres J. Goza, David F. Bliss

Research output: Contribution to journal › Article › peer-review

Abstract

Results from the growth of bulk Ga_1-xIn_xSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.

Original language	English (US)
Pages (from-to)	1090-1094
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.12.051
State	Published - Apr 1 2010
Externally published	Yes

Keywords

A1. Segregation
A2. Growth from melt
B1. Antimonides
B2. Semiconducting ternary compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Crystal growth of bulk ternary semiconductors : Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method. / Houchens, Brent C.; Becla, Piotr; Tritchler, Stephanie E.; Goza, Andres J.; Bliss, David F.

In: Journal of Crystal Growth, Vol. 312, No. 8, 01.04.2010, p. 1090-1094.

Research output: Contribution to journal › Article › peer-review

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abstract = "Results from the growth of bulk Ga1-xInxSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.",

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AU - Bliss, David F.

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AB - Results from the growth of bulk Ga1-xInxSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.

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