Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100)

E. T. Foley, A. F. Kam, J. W. Lyding, Ph Avouris

Research output: Contribution to journalArticle

Abstract

A cryogenic UHV scanning tunneling microscope has been used to study the electron stimulated desorption of hydrogen and deuterium from Si(100) surfaces at 11 K. A strong isotope effect is observed, as seen previously at room temperature. Above ∼5eV, the desorption yields for H and D are temperature independent, while in the tunneling regime, below 4 eV, H is a factor of ∼300 easier to desorb at 11 than at 300 K. This large temperature dependence is explained by a model that involves multiple vibrational excitation and takes into account the increase of the Si-H(D) vibrational lifetime at low temperature.

Original languageEnglish (US)
Pages (from-to)1336-1339
Number of pages4
JournalPhysical review letters
Volume80
Issue number6
DOIs
StatePublished - Jan 1 1998

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cryogenics
deuterium
desorption
hydrogen
isotope effect
microscopes
life (durability)
temperature dependence
scanning
room temperature
excitation
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100). / Foley, E. T.; Kam, A. F.; Lyding, J. W.; Avouris, Ph.

In: Physical review letters, Vol. 80, No. 6, 01.01.1998, p. 1336-1339.

Research output: Contribution to journalArticle

Foley, E. T. ; Kam, A. F. ; Lyding, J. W. ; Avouris, Ph. / Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100). In: Physical review letters. 1998 ; Vol. 80, No. 6. pp. 1336-1339.
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