Cryogenic temperature performance of modulation-doped field-effect transistors

J. Kolodzey, J. Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco, R. Fischer, A. Y. Cho

Research output: Contribution to journalArticlepeer-review


We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.

Original languageEnglish (US)
Pages (from-to)777-779
Number of pages3
JournalElectronics Letters
Issue number12
StatePublished - Sep 1 1989


  • Field-effect transistors
  • Microwave devices and components
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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