Cryogenic temperature performance of modulation-doped field-effect transistors

J. Kolodzey; J. Laskar; S. Boor; S. Reis; A. Ketterson; I. Adesida; D. Sivco; R. Fischer; A. Y. Cho

doi:10.1049/el:19890525

Cryogenic temperature performance of modulation-doped field-effect transistors

J. Kolodzey, J. Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco, R. Fischer, A. Y. Cho

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Abstract

We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency f_T increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher f_T by direct measurement.

Original language	English (US)
Pages (from-to)	777-779
Number of pages	3
Journal	Electronics Letters
Volume	25
Issue number	12
DOIs	https://doi.org/10.1049/el:19890525
State	Published - Sep 1 1989

Keywords

Field-effect transistors
Microwave devices and components
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19890525

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@article{fd11229f09d04058a5f1257fe3ed9407,

title = "Cryogenic temperature performance of modulation-doped field-effect transistors",

abstract = "We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.",

keywords = "Field-effect transistors, Microwave devices and components, Semiconductor devices and materials",

author = "J. Kolodzey and J. Laskar and S. Boor and S. Reis and A. Ketterson and I. Adesida and D. Sivco and R. Fischer and Cho, {A. Y.}",

year = "1989",

month = sep,

day = "1",

doi = "10.1049/el:19890525",

language = "English (US)",

volume = "25",

pages = "777--779",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "12",

}

TY - JOUR

T1 - Cryogenic temperature performance of modulation-doped field-effect transistors

AU - Kolodzey, J.

AU - Laskar, J.

AU - Boor, S.

AU - Reis, S.

AU - Ketterson, A.

AU - Adesida, I.

AU - Sivco, D.

AU - Fischer, R.

AU - Cho, A. Y.

PY - 1989/9/1

Y1 - 1989/9/1

N2 - We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.

AB - We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.

KW - Field-effect transistors

KW - Microwave devices and components

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0024964697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024964697&partnerID=8YFLogxK

U2 - 10.1049/el:19890525

DO - 10.1049/el:19890525

M3 - Article

AN - SCOPUS:0024964697

SN - 0013-5194

VL - 25

SP - 777

EP - 779

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Cryogenic temperature performance of modulation-doped field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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