Cryogenic Small-Signal Model for 0.55-μm Gate-Length Ion-Implanted GaAs MESFET’s

J. Laskar, J. Kruse, M. Feng

Research output: Contribution to journalArticlepeer-review

Abstract

The cryogenic microwave performance of 0.5 ×300- m gate ion-implanted GaAs MESFET’s are presented. The devices studied here have been fabricated as part of a process control monitor chip (PCM) which uses comparable industry standard design rules. We have performed detailed small-signal element modeling to determine the temperature dependence of important physical parameters over a lattice temperature range from 300 K to 115 K. We find appreciable improvement in cut-off frequency and well behaved temperature dependence of transconductance (gm) and gate-source capacitance (Cgs). Empirical relations for the temperature dependence of fT, fmax,gm, and Cgsthat should provide accurate temperature dependant device and circuit models, are presented.

Original languageEnglish (US)
Pages (from-to)242-244
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume2
Issue number6
DOIs
StatePublished - Jun 1992

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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