Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K

Hao Tien Cheng, Cheng Han Wu, Wenning Fu, Hsiao Lun Wang, Milton Feng, Chao Hsin Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Efficient and reliable interconnect could be achieved with cryogenic VCSELs. In this work, our home-made 850 nm VCSEL is characterized from 298 K to 223 K. At 223 K, our device exhibits an output power of 6 mW, and achieves a record -3dB bandwidth of 40.1 GHz. The higher laser output power and extended bandwidth of the VCSEL attributes to the reduced junction temperature of 62°C at 223 K.

Original languageEnglish (US)
Title of host publication25th Opto-Electronics and Communications Conference, OECC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728154459
DOIs
StatePublished - Oct 4 2020
Event25th Opto-Electronics and Communications Conference, OECC 2020 - Taipei, Taiwan, Province of China
Duration: Oct 4 2020Oct 8 2020

Publication series

Name25th Opto-Electronics and Communications Conference, OECC 2020

Conference

Conference25th Opto-Electronics and Communications Conference, OECC 2020
Country/TerritoryTaiwan, Province of China
CityTaipei
Period10/4/2010/8/20

Keywords

  • VCSEL
  • cryogenic VCSEL
  • cryogenics
  • junction temperature
  • optical data link

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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