Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures

J. Kruse; R. A. Schweinfurth; F. Gao; D. Scherrert; D. Barlaget; C. E. Platt; D. J. Van Harlingen; M. Feng

doi:10.1117/12.166152

Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures

J. Kruse, R. A. Schweinfurth, F. Gao, D. Scherrert, D. Barlaget, C. E. Platt, D. J. Van Harlingen, M. Feng

Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to Aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25μm gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.

Original language	English (US)
Pages (from-to)	152-159
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2156
DOIs	https://doi.org/10.1117/12.166152
State	Published - Jan 4 1994
Event	High Tc Microwave Superconductors and Applications 1994 - Los Angeles, United States Duration: Jan 23 1994 → Jan 29 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Online availability

10.1117/12.166152

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Kruse, J., Schweinfurth, R. A., Gao, F., Scherrert, D., Barlaget, D., Platt, C. E., Van Harlingen, D. J., & Feng, M. (1994). Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures. Proceedings of SPIE - The International Society for Optical Engineering, 2156, 152-159. https://doi.org/10.1117/12.166152

Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures. / Kruse, J.; Schweinfurth, R. A.; Gao, F. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2156, 04.01.1994, p. 152-159.

Research output: Contribution to journal › Conference article › peer-review

Kruse, J, Schweinfurth, RA, Gao, F, Scherrert, D, Barlaget, D, Platt, CE, Van Harlingen, DJ & Feng, M 1994, 'Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures', Proceedings of SPIE - The International Society for Optical Engineering, vol. 2156, pp. 152-159. https://doi.org/10.1117/12.166152

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abstract = "This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to Aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25μm gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.",

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AU - Kruse, J.

AU - Schweinfurth, R. A.

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AU - Scherrert, D.

AU - Barlaget, D.

AU - Platt, C. E.

AU - Van Harlingen, D. J.

AU - Feng, M.

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N2 - This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to Aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25μm gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.

AB - This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to Aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25μm gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.

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Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures

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