TY - JOUR
T1 - Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures
AU - Kruse, J.
AU - Schweinfurth, R. A.
AU - Gao, F.
AU - Scherrert, D.
AU - Barlaget, D.
AU - Platt, C. E.
AU - Van Harlingen, D. J.
AU - Feng, M.
N1 - Funding Information:
This research is supported by the National Science Foundation (DMR 91-20000) through the Science and Technology Center for Superconductivity and the Center for Compound Semiconductor Microelectronics. The authors would also like to thank Dr. Steve Foltyn at Los Alamos National Laboratory for providing the YBCO films and Hewlett Packard, EEsof and Cascade Microtech for equipment donations.
Funding Information:
This research is supported by the National Science Foundation (DMR 9 1-20000) through the Science and
Publisher Copyright:
© 1994 SPIE. All rights reserved.
PY - 1994/1/4
Y1 - 1994/1/4
N2 - This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to Aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25μm gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.
AB - This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to Aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80K. Comparisons were made between measured data and theoretical results for passive YBCO and Aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25μm gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id = 100%Idss) as the temperature was lowered from 300K to 80K.
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U2 - 10.1117/12.166152
DO - 10.1117/12.166152
M3 - Conference article
AN - SCOPUS:85076504834
SN - 0277-786X
VL - 2156
SP - 152
EP - 159
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - High Tc Microwave Superconductors and Applications 1994
Y2 - 23 January 1994 through 29 January 1994
ER -