Microwave and dc properties of 0.5-μm InGaAs MESFET's were measured at 300 and 125 K. We have measured approximately 30% increases in RF gm | ext and fT when cooling from 300 to 125 K. We also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering