Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's

S. Maranowski, J. Laskar, Milton Feng, James Kolodzey

Research output: Contribution to journalArticlepeer-review

Abstract

Microwave and dc properties of 0.5-μm InGaAs MESFET's were measured at 300 and 125 K. We have measured approximately 30% increases in RF gm | ext and fT when cooling from 300 to 125 K. We also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.

Original languageEnglish (US)
Pages (from-to)64-66
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number1
DOIs
StatePublished - Jan 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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