Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's

S. Maranowski; J. Laskar; Milton Feng; James Kolodzey

doi:10.1109/55.144953

Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's

S. Maranowski, J. Laskar, Milton Feng, James Kolodzey

Research output: Contribution to journal › Article › peer-review

Abstract

Microwave and dc properties of 0.5-μm InGaAs MESFET's were measured at 300 and 125 K. We have measured approximately 30% increases in RF gm | ext and fT when cooling from 300 to 125 K. We also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.

Original language	English (US)
Pages (from-to)	64-66
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/55.144953
State	Published - Jan 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.144953

Cite this

@article{bc0b8a02724d4652b84204ae1aeccbdd,

title = "Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's",

abstract = "Microwave and dc properties of 0.5-μm InGaAs MESFET's were measured at 300 and 125 K. We have measured approximately 30% increases in RF gm | ext and fT when cooling from 300 to 125 K. We also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.",

author = "S. Maranowski and J. Laskar and Milton Feng and James Kolodzey",

note = "Funding Information: Manuscript received September 4, 1991; revised November 2, 1991. This work was supported by the National Science Foundation under Grant ECD89-43166, and by AT&T under Contract AT&T AFFL 52.",

year = "1992",

month = jan,

doi = "10.1109/55.144953",

language = "English (US)",

volume = "13",

pages = "64--66",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's

AU - Maranowski, S.

AU - Laskar, J.

AU - Feng, Milton

AU - Kolodzey, James

N1 - Funding Information: Manuscript received September 4, 1991; revised November 2, 1991. This work was supported by the National Science Foundation under Grant ECD89-43166, and by AT&T under Contract AT&T AFFL 52.

PY - 1992/1

Y1 - 1992/1

N2 - Microwave and dc properties of 0.5-μm InGaAs MESFET's were measured at 300 and 125 K. We have measured approximately 30% increases in RF gm | ext and fT when cooling from 300 to 125 K. We also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.

AB - Microwave and dc properties of 0.5-μm InGaAs MESFET's were measured at 300 and 125 K. We have measured approximately 30% increases in RF gm | ext and fT when cooling from 300 to 125 K. We also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.

UR - http://www.scopus.com/inward/record.url?scp=0026628398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026628398&partnerID=8YFLogxK

U2 - 10.1109/55.144953

DO - 10.1109/55.144953

M3 - Article

AN - SCOPUS:0026628398

VL - 13

SP - 64

EP - 66

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -

Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's

Abstract

ASJC Scopus subject areas

Access to Document

Other links

Fingerprint

Cite this