TY - GEN
T1 - Cryogenic cathodoluminescence from CuxAg1-xInSe 2 thin films
AU - Aquino, Angel R.
AU - Rockett, Angus A.
AU - Little, Scott A.
AU - Marsillac, Sylvain
PY - 2010
Y1 - 2010
N2 - CuxAg1-xInSe2 (CAIS) thin films were deposited by a hybrid magnetron sputtering/evaporation process over a range of x values. Cryogenic cathodoluminescence (CL) data was obtained from these thin films. Emission peaks were identified and spectrally-resolved images were recorded at these wavelengths. A power-dependent CL series was also recorded. Emissions were fairly uniform across the sample for AgInSe2 (AIS) (x=0). As x increased, the emission became less uniform both in intensity and in spectral components. AIS showed no significant difference between grain and grain boundary emission, while some grain boundaries in CAIS with x=0 showed higher emission intensity than the grains. No reduction in emission intensity was seen from topmost surface features in AIS, as opposed to CIS. Cu 0.6Ag0.4InSe2 showed the largest variation in emission from grain to grain, while CIS showed the largest variation in emission from grain to grain boundary.
AB - CuxAg1-xInSe2 (CAIS) thin films were deposited by a hybrid magnetron sputtering/evaporation process over a range of x values. Cryogenic cathodoluminescence (CL) data was obtained from these thin films. Emission peaks were identified and spectrally-resolved images were recorded at these wavelengths. A power-dependent CL series was also recorded. Emissions were fairly uniform across the sample for AgInSe2 (AIS) (x=0). As x increased, the emission became less uniform both in intensity and in spectral components. AIS showed no significant difference between grain and grain boundary emission, while some grain boundaries in CAIS with x=0 showed higher emission intensity than the grains. No reduction in emission intensity was seen from topmost surface features in AIS, as opposed to CIS. Cu 0.6Ag0.4InSe2 showed the largest variation in emission from grain to grain, while CIS showed the largest variation in emission from grain to grain boundary.
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U2 - 10.1109/PVSC.2010.5614139
DO - 10.1109/PVSC.2010.5614139
M3 - Conference contribution
AN - SCOPUS:78650107617
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3386
EP - 3390
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -