Critical behavior of disordered degenerate semiconductors. I. Models, symmetries, and formalism

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Abstract

A model that describes the qualitative properties of the electronic states of a disordered degenerate semiconductor with a finite number of degeneracy points is proposed. I introduce an effective Hamiltonian of the form of a Dirac operator coupled to randomly distributed fields. It is shown that there is a phase transition between the semimetal and metallic phases followed by a localization transition. The symmetry breaking associated with this transition is related to the nonsymmorphic character of the space group. The density of states plays the role of the order parameter and the elastic mean free path is the correlation length. A path-integral representation is introduced and used to characterize the universality class of this transition. The lower critical dimension is 2. A mapping of the two-dimensional case to one-dimensional self-interacting Fermi systems is presented. Applications to zero-gap semiconductors and other systems are discussed.

Original languageEnglish (US)
Pages (from-to)3257-3262
Number of pages6
JournalPhysical Review B
Volume33
Issue number5
DOIs
StatePublished - Jan 1 1986

ASJC Scopus subject areas

  • Condensed Matter Physics

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