TY - JOUR
T1 - Creep Characterization of Amorphous SiO2 in the Transmission Electron Microscope Using Digital Image Correlation and Finite Element Analysis
AU - Zhang, Y.
AU - Dillon, Shen J
AU - Lambros, J.
N1 - Funding Information:
This work was carried out in the Materials Research Laboratory Central Research Facilities, University of Illinois. Funding for this research was provided by the National Science Foundation (grant No. CMMI 18-25466). The authors acknowledge Dr. Honghui Zhou, Dr. Waclaw Swiech and Dr. Changqiang Chen for help with FIB, and TEM loading experiments.
Funding Information:
This work was carried out in the Materials Research Laboratory Central Research Facilities, University of Illinois. Funding for this research was provided by the National Science Foundation (grant No. CMMI 18-25466). The authors acknowledge Dr. Honghui Zhou, Dr. Waclaw Swiech and Dr. Changqiang Chen for help with FIB, and TEM loading experiments.
Publisher Copyright:
© 2023, Society for Experimental Mechanics.
PY - 2023/4
Y1 - 2023/4
N2 - Background: Amorphous silica (a-SiO2) exhibits creep behavior under electron beam irradiation in the transmission electron microscope (TEM) even at room temperature. This effect is invariably present during in situ TEM microscale mechanical testing of a-SiO2, thus necessitating creep characterization of this material in the TEM environment. Objective: In this paper, we extract creep properties of a-SiO2 during electron beam irradiation induced creep (IIC) by combining experimental measurements with a 2D finite element model (FEM) based on an assumed creep behavior modeled by power creep law. Methods: Micron sized a-SiO2 beam samples deposited with gold nanoparticles are machined by focused ion beam milling and loaded in the TEM via indentation. The applied load-displacement profile at the loading point is recorded by the indenter, while full-field deformation is measured from the TEM images by correlating deformed and undeformed nanoparticle speckle patterns using digital image correlation (DIC). Results: The elastic modulus and creep properties are obtained by solving an inverse problem in the FEM analysis based on the experimentally measured load-displacement data, and are validated by full-field displacement comparisons between FEM results and DIC measurements. Conclusion: FEM and DIC results show good agreement, indicating applicability of the power creep model and the accuracy of extracted creep properties. A linear dependance between creep strain rate and applied stress is derived. Possible error sources from both the experiment and simulation are discussed.
AB - Background: Amorphous silica (a-SiO2) exhibits creep behavior under electron beam irradiation in the transmission electron microscope (TEM) even at room temperature. This effect is invariably present during in situ TEM microscale mechanical testing of a-SiO2, thus necessitating creep characterization of this material in the TEM environment. Objective: In this paper, we extract creep properties of a-SiO2 during electron beam irradiation induced creep (IIC) by combining experimental measurements with a 2D finite element model (FEM) based on an assumed creep behavior modeled by power creep law. Methods: Micron sized a-SiO2 beam samples deposited with gold nanoparticles are machined by focused ion beam milling and loaded in the TEM via indentation. The applied load-displacement profile at the loading point is recorded by the indenter, while full-field deformation is measured from the TEM images by correlating deformed and undeformed nanoparticle speckle patterns using digital image correlation (DIC). Results: The elastic modulus and creep properties are obtained by solving an inverse problem in the FEM analysis based on the experimentally measured load-displacement data, and are validated by full-field displacement comparisons between FEM results and DIC measurements. Conclusion: FEM and DIC results show good agreement, indicating applicability of the power creep model and the accuracy of extracted creep properties. A linear dependance between creep strain rate and applied stress is derived. Possible error sources from both the experiment and simulation are discussed.
KW - Digital image correlation
KW - Finite element model
KW - Inverse analysis
KW - Irradiation induced creep
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=85147748759&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85147748759&partnerID=8YFLogxK
U2 - 10.1007/s11340-022-00937-4
DO - 10.1007/s11340-022-00937-4
M3 - Article
AN - SCOPUS:85147748759
SN - 0014-4851
VL - 63
SP - 621
EP - 636
JO - Experimental Mechanics
JF - Experimental Mechanics
IS - 4
ER -