Abstract
The redistribution of Cr in semi-insulating GaAs upon annealing at 860°C can be greatly reduced by eliminating the use of a SiO2 encapsulant. The annealing schedule utilized a controlled atmosphere technique which insured the thermodynamic stability of the GaAs surfaces and had no tendency to getter Cr. The sample annealed with a SiO2 encapsulant showed a secondary-ion-mass-spectroscopy-measured minimum Cr concentration which was lower by a factor of 20-25 than the original, whereas the comparison of an annealed sample without the SiO2 cap had a minimum Cr concentration which was smaller by a factor of 2. The conversion near the surfaces of semi-insulating Cr-doped GaAs to moderately high-conductivity n type upon annealing can be minimized by using the above technique without an encapsulant.
Original language | English (US) |
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Pages (from-to) | 473-475 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 37 |
Issue number | 5 |
DOIs | |
State | Published - 1980 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)