Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET

M. Mohamed, Z. Aksamija, U. Ravaioli

Research output: Contribution to journalConference article

Abstract

This paper explores self-heating effects on junctionless gate-all-around nanowire MOSFET using self-consistently coupled 3D full band electro-thermal transport. The self-consistent algorithm begins by supplying the heat generation data from the 3D electron Monte Carlo with 2D quantum correction to the phonon Monte Carlo. Subsequently, the phonon Monte Carlo transports the phonons introduced from the electron simulation and considers their scattering through the anharmonic three-phonon processes. The anharmonic three-phonon decay and the use of full dispersion facilitate a detailed description of heat transfer and the determination of the temperature map. We compare the performance of gate-all-around junctionless against the conventional inversion mode gate-all-around MOSFET. Our results indicate that junctionless MOSFET has less self-heating effects than the conventional inversion mode device, particularly at the limits of high currents.

Original languageEnglish (US)
Article number012026
JournalJournal of Physics: Conference Series
Volume647
Issue number1
DOIs
StatePublished - Oct 13 2015
Event19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2015 - Salamanca, Spain
Duration: Jun 29 2015Jul 2 2015

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field effect transistors
heating
inversions
electrons
simulation
heat generation
supplying
high current
phonons
nanowires
heat transfer
decay
scattering
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET. / Mohamed, M.; Aksamija, Z.; Ravaioli, U.

In: Journal of Physics: Conference Series, Vol. 647, No. 1, 012026, 13.10.2015.

Research output: Contribution to journalConference article

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