Coupled electro-thermal simulation of MOSFETs

Chunjian Ni, Zlatan Aksamija, Jayathi Y. Murthy, Umberto Ravaioli

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Thermal transport in metal-oxide-semiconductor field effect transistors (MOSFETs) due to electron-phonon scattering is simulated using phonon generation rates obtained from an electron Monte Carlo device simulation. The device simulation accounts for a full band description of both electrons and phonons considering 22 types of electron-phonon scattering events. Detailed profiles of phonon emission/absorption rates in the physical and momentum spaces are generated and are used in a MOSFET thermal transport simulation with a recently-developed anisotropic relaxation time model based on the Boltzmann transport equation (BTE). Comparisons with a Fourier conduction model reveal that the anisotropic heat conduction model predicts higher maximum temperatures because it accounts for the bottlenecks in phonon scattering pathways. Heat fluxes leaving the boundaries associated with different phonon polarizations and frequencies are also examined to reveal the main modes responsible for transport. It is found that though the majority of the heat generation is in the optical modes, the heat generated in the acoustic modes is not negligible. The modes primarily responsible for the transport of heat are found to be medium-to-high frequency acoustic phonon modes.

Original languageEnglish (US)
Title of host publicationProceedings of the ASME InterPack Conference 2009, IPACK2009
Number of pages13
StatePublished - 2010
Event2009 ASME InterPack Conference, IPACK2009 - San Francisco, CA, United States
Duration: Jul 19 2009Jul 23 2009

Publication series

NameProceedings of the ASME InterPack Conference 2009, IPACK2009


Other2009 ASME InterPack Conference, IPACK2009
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering


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