Coupled-cavity VCSELs: Numerical analysis of physical phenomena

Leszek Frasunkiewicz, Maciej Dems, Robert P. Sarzała, Kent D. Choquette, Krassimir Panajotov, Tomasz Czyszanowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A self-consistent model of a GaAs-based 850 nm coupled-cavity vertical-cavity surface-emitting diode laser is presented. The analyzed laser consists of two identical AlGaAs cavities with GaAs quantum wells, separated with 10 pairs of middle DBR. The current apertures are realized by ion-implantation for the top cavity and selective oxidation for the bottom. To accurately simulate the physical phenomena present in the CW regime of the analyzed device, we use a multi-physical model, which comprises self-consistent Finite Element Method (FEM) thermo-electrical model. The numerical parameters have been found by the calibration based on experimental results. We have analyzed and shown the influence of the driving voltages on the temperature distribution within the analyzed structure and current densities in both cavities.

Original languageEnglish (US)
Title of host publicationSemiconductor Lasers and Laser Dynamics VI
PublisherSPIE
ISBN (Print)9781628410822
DOIs
StatePublished - 2014
EventSemiconductor Lasers and Laser Dynamics VI - Brussels, Belgium
Duration: Apr 14 2014Apr 17 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9134
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherSemiconductor Lasers and Laser Dynamics VI
Country/TerritoryBelgium
CityBrussels
Period4/14/144/17/14

Keywords

  • 850 nm light emitter
  • Coupled cavities
  • Numerical simulation
  • Vertical-Cavity Surface-Emitting Laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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