TY - GEN
T1 - Coupled-cavity VCSELs
T2 - Semiconductor Lasers and Laser Dynamics VI
AU - Frasunkiewicz, Leszek
AU - Dems, Maciej
AU - Sarzała, Robert P.
AU - Choquette, Kent D.
AU - Panajotov, Krassimir
AU - Czyszanowski, Tomasz
PY - 2014
Y1 - 2014
N2 - A self-consistent model of a GaAs-based 850 nm coupled-cavity vertical-cavity surface-emitting diode laser is presented. The analyzed laser consists of two identical AlGaAs cavities with GaAs quantum wells, separated with 10 pairs of middle DBR. The current apertures are realized by ion-implantation for the top cavity and selective oxidation for the bottom. To accurately simulate the physical phenomena present in the CW regime of the analyzed device, we use a multi-physical model, which comprises self-consistent Finite Element Method (FEM) thermo-electrical model. The numerical parameters have been found by the calibration based on experimental results. We have analyzed and shown the influence of the driving voltages on the temperature distribution within the analyzed structure and current densities in both cavities.
AB - A self-consistent model of a GaAs-based 850 nm coupled-cavity vertical-cavity surface-emitting diode laser is presented. The analyzed laser consists of two identical AlGaAs cavities with GaAs quantum wells, separated with 10 pairs of middle DBR. The current apertures are realized by ion-implantation for the top cavity and selective oxidation for the bottom. To accurately simulate the physical phenomena present in the CW regime of the analyzed device, we use a multi-physical model, which comprises self-consistent Finite Element Method (FEM) thermo-electrical model. The numerical parameters have been found by the calibration based on experimental results. We have analyzed and shown the influence of the driving voltages on the temperature distribution within the analyzed structure and current densities in both cavities.
KW - 850 nm light emitter
KW - Coupled cavities
KW - Numerical simulation
KW - Vertical-Cavity Surface-Emitting Laser
UR - http://www.scopus.com/inward/record.url?scp=84902477606&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84902477606&partnerID=8YFLogxK
U2 - 10.1117/12.2052602
DO - 10.1117/12.2052602
M3 - Conference contribution
AN - SCOPUS:84902477606
SN - 9781628410822
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Semiconductor Lasers and Laser Dynamics VI
PB - SPIE
Y2 - 14 April 2014 through 17 April 2014
ER -