Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

X. Li; A. M. Jones; S. D. Roh; D. A. Turnbull; E. E. Reuter; S. Q. Gu; S. G. Bishop; J. J. Coleman

Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

X. Li, A. M. Jones, S. D. Roh, D. A. Turnbull, E. E. Reuter, S. Q. Gu, S. G. Bishop, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

Original language	English (US)
Pages (from-to)	943-948
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	395
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD",

abstract = "We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.",

author = "X. Li and Jones, {A. M.} and Roh, {S. D.} and Turnbull, {D. A.} and Reuter, {E. E.} and Gu, {S. Q.} and Bishop, {S. G.} and Coleman, {J. J.}",

year = "1996",

language = "English (US)",

volume = "395",

pages = "943--948",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

AU - Li, X.

AU - Jones, A. M.

AU - Roh, S. D.

AU - Turnbull, D. A.

AU - Reuter, E. E.

AU - Gu, S. Q.

AU - Bishop, S. G.

AU - Coleman, J. J.

PY - 1996

Y1 - 1996

N2 - We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

AB - We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029765309&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029765309

SN - 0272-9172

VL - 395

SP - 943

EP - 948

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Abstract

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