Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

X. Li, A. M. Jones, S. D. Roh, D. A. Turnbull, E. E. Reuter, S. Q. Gu, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalConference article

Abstract

We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

Original languageEnglish (US)
Pages (from-to)943-948
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

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Metallorganic chemical vapor deposition
Epitaxial growth
epitaxy
metalorganic chemical vapor deposition
Surface morphology
Cathodoluminescence
Optical properties
cathodoluminescence
optical properties
Photoluminescence
photoluminescence
Aluminum Oxide
Buffer layers
Sapphire
Atmospheric pressure
atmospheric pressure
sapphire
buffers
Spectroscopy
Imaging techniques

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Li, X., Jones, A. M., Roh, S. D., Turnbull, D. A., Reuter, E. E., Gu, S. Q., ... Coleman, J. J. (1996). Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD. Materials Research Society Symposium - Proceedings, 395, 943-948.

Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD. / Li, X.; Jones, A. M.; Roh, S. D.; Turnbull, D. A.; Reuter, E. E.; Gu, S. Q.; Bishop, S. G.; Coleman, J. J.

In: Materials Research Society Symposium - Proceedings, Vol. 395, 01.01.1996, p. 943-948.

Research output: Contribution to journalConference article

Li, X, Jones, AM, Roh, SD, Turnbull, DA, Reuter, EE, Gu, SQ, Bishop, SG & Coleman, JJ 1996, 'Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD', Materials Research Society Symposium - Proceedings, vol. 395, pp. 943-948.
Li, X. ; Jones, A. M. ; Roh, S. D. ; Turnbull, D. A. ; Reuter, E. E. ; Gu, S. Q. ; Bishop, S. G. ; Coleman, J. J. / Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 395. pp. 943-948.
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abstract = "We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.",
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AU - Li, X.

AU - Jones, A. M.

AU - Roh, S. D.

AU - Turnbull, D. A.

AU - Reuter, E. E.

AU - Gu, S. Q.

AU - Bishop, S. G.

AU - Coleman, J. J.

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N2 - We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catholuminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

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