Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs

H. Kanber, M. Feng, V. K. Eu, R. C. Rush, W. B. Henderson

Research output: Contribution to journalArticlepeer-review


We compare the chemical profiles of Cr, Mn, Si and Se with the electron concentration profiles in Si, Se and S implanted semi-insulating Cr-O doped bulk GaAs substrates and undoped VPE buffer layers annealed with and without a SiO2 encapsulant in a H2-As4 atmosphere. A higher activation efficiency in the net electron concentration and the gateless saturated channel current is measured for SiO2 encapsulated wafers annealed under arsine overpressure than for capless annealed ones using Cr-O doped bulk GaAs substrates. On the other hand, the net donor concentration peak is higher for implanted buffer epi layers capless annealed under arsine overpressure than for SiO2 encapsulated ones. Secondary ion mass spectrometry (SIMS) studies of the Cr decoration of the implant damage indicate that the damage from the 100 keV Si implant anneals out at 840°C while a temperature of 900°C is required to anneal out the 260 keV Se implant damage. An explanation of these differences is provided using an impurity redistribution model and charge neutrality considerations. Excellent Hall electron mobilities at liquid nitrogen temperature of 5400-9200 cm2/V-sec are measured for Si-implanted buffer epi substrates.

Original languageEnglish (US)
Pages (from-to)1083-1114
Number of pages32
JournalJournal of Electronic Materials
Issue number6
StatePublished - Nov 1982
Externally publishedYes


  • Ion implanted GaAs
  • annealing under arsine overpressure
  • impurity redistribution
  • undoped buffer layers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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