Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

Liang Wang; Weifeng Zhao; Ilesanmi Adesida

doi:10.1063/1.2393005

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

Liang Wang, Weifeng Zhao, Ilesanmi Adesida

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Abstract

The characteristics of Ir on InAlAs and on InAlAsInGaAsInP high electron mobility transistor (HEMT) heterostructures were characterized. A maximum Schottky barrier height (B) of 825 meV was achieved for IrInAlAs after annealing at 400 °C. Transmission electron microscopy investigations confirmed that an amorphous layer (a layer) exists at the IrInAlAs interface at that temperature. Results indicate that enhancement of B is associated with the a layer, while beyond 400 °C, the decrease of B is due to the crystallization of the a layer and the formation of Ir As2. The enhancement of B for IrInAlAs and the slow diffusion of Ir in IrAlAs make it a superior thermally stable gate metal for InAlAsInGaAs HEMTs.

Original language	English (US)
Article number	211910
Journal	Applied Physics Letters
Volume	89
Issue number	21
DOIs	https://doi.org/10.1063/1.2393005
State	Published - 2006
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.2393005

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@article{4926be60b94143bb81a110ab48ee6b48,

title = "Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors",

abstract = "The characteristics of Ir on InAlAs and on InAlAsInGaAsInP high electron mobility transistor (HEMT) heterostructures were characterized. A maximum Schottky barrier height (B) of 825 meV was achieved for IrInAlAs after annealing at 400 °C. Transmission electron microscopy investigations confirmed that an amorphous layer (a layer) exists at the IrInAlAs interface at that temperature. Results indicate that enhancement of B is associated with the a layer, while beyond 400 °C, the decrease of B is due to the crystallization of the a layer and the formation of Ir As2. The enhancement of B for IrInAlAs and the slow diffusion of Ir in IrAlAs make it a superior thermally stable gate metal for InAlAsInGaAs HEMTs.",

author = "Liang Wang and Weifeng Zhao and Ilesanmi Adesida",

note = "Funding Information: This work was supported by the NSF ANI (01-21662 ITR) and ONR (N00014-02-10018, D. Purdy). TEM works were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy (DEFG02-91-ER45439). The authors thank A. Rockett for helpful discussion. The assistance of J. G. Wen and C. H. Lei on the TEM is acknowledged",

year = "2006",

doi = "10.1063/1.2393005",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

AU - Wang, Liang

AU - Zhao, Weifeng

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by the NSF ANI (01-21662 ITR) and ONR (N00014-02-10018, D. Purdy). TEM works were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy (DEFG02-91-ER45439). The authors thank A. Rockett for helpful discussion. The assistance of J. G. Wen and C. H. Lei on the TEM is acknowledged

PY - 2006

Y1 - 2006

N2 - The characteristics of Ir on InAlAs and on InAlAsInGaAsInP high electron mobility transistor (HEMT) heterostructures were characterized. A maximum Schottky barrier height (B) of 825 meV was achieved for IrInAlAs after annealing at 400 °C. Transmission electron microscopy investigations confirmed that an amorphous layer (a layer) exists at the IrInAlAs interface at that temperature. Results indicate that enhancement of B is associated with the a layer, while beyond 400 °C, the decrease of B is due to the crystallization of the a layer and the formation of Ir As2. The enhancement of B for IrInAlAs and the slow diffusion of Ir in IrAlAs make it a superior thermally stable gate metal for InAlAsInGaAs HEMTs.

AB - The characteristics of Ir on InAlAs and on InAlAsInGaAsInP high electron mobility transistor (HEMT) heterostructures were characterized. A maximum Schottky barrier height (B) of 825 meV was achieved for IrInAlAs after annealing at 400 °C. Transmission electron microscopy investigations confirmed that an amorphous layer (a layer) exists at the IrInAlAs interface at that temperature. Results indicate that enhancement of B is associated with the a layer, while beyond 400 °C, the decrease of B is due to the crystallization of the a layer and the formation of Ir As2. The enhancement of B for IrInAlAs and the slow diffusion of Ir in IrAlAs make it a superior thermally stable gate metal for InAlAsInGaAs HEMTs.

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DO - 10.1063/1.2393005

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 211910

ER -

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

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