Abstract
A study was conducted to investigate the growth of copper nanowires (NWs) with five-twinned structure by chemical vapor deposition (CVD). The study used a transmission electron microscopy (TEM) and electron diffraction (ED) method to investigate the growth of CuNWs. It was observed during electron emission investigation that the CuNWs can be used as a potential electron emitter. The study also observed that the CuNWs of 70-250 nm diameter were grown on Si at substrate temperature of 200-300°C. The study also found that the nanowires can be grown on other substrates including glass, metal, metal oxide, and polymers. The diameters and length of nanowires can be controlled by substrate materials, substrate temperature, deposition time, and precursor feeding rate.
Original language | English (US) |
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Pages (from-to) | 1859-1863 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 10 |
DOIs | |
State | Published - May 19 2008 |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering