Copper bottom-up filling for through silicon via (TSV) using single JGB additive

J. Tang; Q. S. Zhu; Y. Zhang; X. Zhang; J. D. Guo; J. K. Shang

doi:10.1149/2.0101509eel

Copper bottom-up filling for through silicon via (TSV) using single JGB additive

J. Tang
, Q. S. Zhu
, Y. Zhang
, X. Zhang
, J. D. Guo
, J. K. Shang

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A copper electroplating using single JGB additive was developed for through silicon via (TSV) filling. The micro-vias were perfectly void-free filled by single JGB additive. The electrochemical analysis demonstrated a "bottom-up" deposition mode by single JGB additive. The "V" shaped filling was attributed to JGB gradient suppressing effect along the micro-via depth. The filled microstructure by single JGB mainly contained fine equiaxed grains while the filled microstructure by PEG-SPS additive contained large columnar grains.

Original language	English (US)
Pages (from-to)	D28-D30
Journal	ECS Electrochemistry Letters
Volume	4
Issue number	9
DOIs	https://doi.org/10.1149/2.0101509eel
State	Published - 2015

ASJC Scopus subject areas

Fuel Technology
Electrochemistry
Materials Chemistry

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10.1149/2.0101509eel

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@article{182f84c797d94aed84e2b2612e448d14,

title = "Copper bottom-up filling for through silicon via (TSV) using single JGB additive",

abstract = "A copper electroplating using single JGB additive was developed for through silicon via (TSV) filling. The micro-vias were perfectly void-free filled by single JGB additive. The electrochemical analysis demonstrated a {"}bottom-up{"} deposition mode by single JGB additive. The {"}V{"} shaped filling was attributed to JGB gradient suppressing effect along the micro-via depth. The filled microstructure by single JGB mainly contained fine equiaxed grains while the filled microstructure by PEG-SPS additive contained large columnar grains.",

author = "J. Tang and Zhu, \{Q. S.\} and Y. Zhang and X. Zhang and Guo, \{J. D.\} and Shang, \{J. K.\}",

note = "We would like to thank Professor Craig Mello for valuable advice throughout this research, Professor Miguel Esteban for manuscripts revision and renal cell line RCC4, Professor Duanqing Pei for the lung cancer cell line 95D. This research was supported by Introduced Innovative R\&D Team Program of Guangdong Province (no. 201001Y0104789252), 863 Program of China (no. 2012AA022501), Strategic Emerging Industry Key Technology Project of Guangdong Province (no. 2012A080800006), the National Natural Science Foundation of China (nos. 30870535 and 90913017), the {"}Hundred Talents Plan{"} of Guangzhou Municipality and Combination Project of Guangdong Province and the Ministry of Education (no. 2011B090400478).",

year = "2015",

doi = "10.1149/2.0101509eel",

language = "English (US)",

volume = "4",

pages = "D28--D30",

journal = "ECS Electrochemistry Letters",

issn = "2162-8726",

publisher = "The Electrochemical Society",

number = "9",

}

TY - JOUR

T1 - Copper bottom-up filling for through silicon via (TSV) using single JGB additive

AU - Tang, J.

AU - Zhu, Q. S.

AU - Zhang, Y.

AU - Zhang, X.

AU - Guo, J. D.

AU - Shang, J. K.

N1 - We would like to thank Professor Craig Mello for valuable advice throughout this research, Professor Miguel Esteban for manuscripts revision and renal cell line RCC4, Professor Duanqing Pei for the lung cancer cell line 95D. This research was supported by Introduced Innovative R&D Team Program of Guangdong Province (no. 201001Y0104789252), 863 Program of China (no. 2012AA022501), Strategic Emerging Industry Key Technology Project of Guangdong Province (no. 2012A080800006), the National Natural Science Foundation of China (nos. 30870535 and 90913017), the "Hundred Talents Plan" of Guangzhou Municipality and Combination Project of Guangdong Province and the Ministry of Education (no. 2011B090400478).

PY - 2015

Y1 - 2015

N2 - A copper electroplating using single JGB additive was developed for through silicon via (TSV) filling. The micro-vias were perfectly void-free filled by single JGB additive. The electrochemical analysis demonstrated a "bottom-up" deposition mode by single JGB additive. The "V" shaped filling was attributed to JGB gradient suppressing effect along the micro-via depth. The filled microstructure by single JGB mainly contained fine equiaxed grains while the filled microstructure by PEG-SPS additive contained large columnar grains.

AB - A copper electroplating using single JGB additive was developed for through silicon via (TSV) filling. The micro-vias were perfectly void-free filled by single JGB additive. The electrochemical analysis demonstrated a "bottom-up" deposition mode by single JGB additive. The "V" shaped filling was attributed to JGB gradient suppressing effect along the micro-via depth. The filled microstructure by single JGB mainly contained fine equiaxed grains while the filled microstructure by PEG-SPS additive contained large columnar grains.

UR - https://www.scopus.com/pages/publications/84937428606

UR - https://www.scopus.com/pages/publications/84937428606#tab=citedBy

U2 - 10.1149/2.0101509eel

DO - 10.1149/2.0101509eel

M3 - Article

AN - SCOPUS:84937428606

SN - 2162-8726

VL - 4

SP - D28-D30

JO - ECS Electrochemistry Letters

JF - ECS Electrochemistry Letters

IS - 9

ER -

Copper bottom-up filling for through silicon via (TSV) using single JGB additive

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