Abstract
Impurity-induced disordering (IID) in vertical-cavity surface-emitting lasers (VCSELs) has been shown to provide enhanced performance, such as achieving single fundamental-mode operation with higher output powers when compared to conventional VCSELs. This work presents the performance of oxide-confined, λ ~ 850 nm, VCSELs fabricated with varying IID aperture sizes which are characterized for maximum single-fundamental-mode output power. The electrical and optical performance of these devices are shown in comparison to traditional oxide-confined VCSELs and the optimal IID aperture size is experimentally validated. Control of the lateral-to-vertical (L/V) IID aperture profile is then demonstrated through engineering the strain induced by the IID diffusion mask. This extensive control over the IID aperture enables improved, manufacturable, IID VCSEL designs.
| Original language | English (US) |
|---|---|
| State | Published - 2018 |
| Event | 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States Duration: May 7 2018 → May 10 2018 |
Other
| Other | 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 |
|---|---|
| Country/Territory | United States |
| City | Austin |
| Period | 5/7/18 → 5/10/18 |
Keywords
- Impurity-induced disordering
- Single-fundamental-mode VCSELs
- VCSEL aperture control
- Vertical-cavity surface-emitting lasers
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering