Controlling dopant diffusion and activation through surface chemistry

K. Dev, C. T.M. Kwok, R. Vaidyanathan, R. D. Braatz, Edmund G Seebauer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The degree of chemical bond saturation at surfaces can affect dopant activation and transient enhanced diffusion (TED) in silicon during annealing for ultrashallow junction formation. Point defects such as interstitial atoms can more easily combine with unsaturated dangling bonds man with saturated ones. Thus, maintaining an atomically clean surface during annealing greatly increases the annihilation probability. Statistical arguments show that such a surface removes Si interstitials from the underlying solid much faster than dopant interstitials. Simulations for boron and experiments for arsenic show that this effect leads to large and simultaneous improvements in dopant activation and TED. This surface-based method of defect engineering is relatively easy to integrate into a process line, and offers benefits over and above what can be obtained with methods used in parallel such as carbon co-implantation and laser annealing.

Original languageEnglish (US)
Title of host publicationION IMPLANTATION TECHNOLOGY
Subtitle of host publication16th International Conference on Ion Implantation Technology, IIT 2006
Pages50-53
Number of pages4
Volume866
StatePublished - 2006
EventION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 - Marseille, France
Duration: Jun 11 2006Nov 16 2006

Other

OtherION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006
CountryFrance
CityMarseille
Period6/11/0611/16/06

Keywords

  • Defect engineering
  • Ion implantation
  • Transient enhanced diffusion
  • Ultrashallow junctions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Dev, K., Kwok, C. T. M., Vaidyanathan, R., Braatz, R. D., & Seebauer, E. G. (2006). Controlling dopant diffusion and activation through surface chemistry. In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 (Vol. 866, pp. 50-53)