Controlled Polarization Switching in VCSELs by Means of Asymmetric Current Injection

L. M. Augustin; E. Smalbrugge; K. D. Choquette; F. Karouta; R. C. Strijbos; G. Verschaffelt; E. J. Geluk; T. G. Van de Roer; H. Thienpont

doi:10.1109/LPT.2004.823693

Controlled Polarization Switching in VCSELs by Means of Asymmetric Current Injection

L. M. Augustin, E. Smalbrugge, K. D. Choquette, F. Karouta, R. C. Strijbos, G. Verschaffelt, E. J. Geluk, T. G. Van de Roer, H. Thienpont

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [11̄0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25°-90° towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.

Original language	English (US)
Pages (from-to)	708-710
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2004.823693
State	Published - Mar 2004

Keywords

Asymmetric current injection
Distributed feedback lasers
GaAs
Intracavity contacts
Polarization control
Polarization switching
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.823693

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title = "Controlled Polarization Switching in VCSELs by Means of Asymmetric Current Injection",

abstract = "We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [1{\=1}0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25°-90° towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.",

keywords = "Asymmetric current injection, Distributed feedback lasers, GaAs, Intracavity contacts, Polarization control, Polarization switching, Semiconductor lasers",

author = "Augustin, {L. M.} and E. Smalbrugge and Choquette, {K. D.} and F. Karouta and Strijbos, {R. C.} and G. Verschaffelt and Geluk, {E. J.} and {Van de Roer}, {T. G.} and H. Thienpont",

year = "2004",

month = mar,

doi = "10.1109/LPT.2004.823693",

language = "English (US)",

volume = "16",

pages = "708--710",

journal = "IEEE Photonics Technology Letters",

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T1 - Controlled Polarization Switching in VCSELs by Means of Asymmetric Current Injection

AU - Augustin, L. M.

AU - Smalbrugge, E.

AU - Choquette, K. D.

AU - Karouta, F.

AU - Strijbos, R. C.

AU - Verschaffelt, G.

AU - Geluk, E. J.

AU - Van de Roer, T. G.

AU - Thienpont, H.

PY - 2004/3

Y1 - 2004/3

N2 - We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [11̄0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25°-90° towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.

AB - We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts aligned along the [11̄0] crystal direction, the observed laser polarization is parallel to [110], whereas, using the contacts along the [110] crystal direction, the polarization of the laser emission switches to a direction making an angle of 25°-90° towards [110]. To overcome this peculiar result, a careful design of the contact layers in the intracavity structure is required.

KW - Asymmetric current injection

KW - Distributed feedback lasers

KW - GaAs

KW - Intracavity contacts

KW - Polarization control

KW - Polarization switching

KW - Semiconductor lasers

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JO - IEEE Photonics Technology Letters

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Controlled Polarization Switching in VCSELs by Means of Asymmetric Current Injection

Abstract

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